PE8806 - N-Channel Enhancement Mode Power MOSFET

semi one

Datasheet Details

Part number	PE8806
Manufacturer	semi one
File Size	883.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8806-semione.pdf

The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |