* Order code SCT020H120G3AG VDS 1200 V RDS(on) typ. 18.5 mΩ
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased efficiency
SCT020H120G3AG Datasheet (357.85 KB)
SCT020H120G3AG
357.85 KB
Automotive-grade silicon carbide power mosfet.
SCT020H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
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