10N15 Datasheet | Specifications & PDF Download

N-Channel Super Trench Power MOSFET Description The HMS10N15D uses Super Trench technology that is uniquely optimized to provide the most efficient hi

(72 views)

UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS 1  DESCRIPTION The UTC 10N15 is an N-channel enhanceme

(59 views)

Silicon N-Channel Power MOSFET ○R CS10N15 A4 General Description： CS10N15 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

(56 views)

(53 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

(37 views)

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R BL10N15A BL10P15A MAIN CHARACTERISTICS IC VCEO PC (TO-247) 10A 150V 100W Package    APPLI

(36 views)

N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL DESCRIPTION The ME10N15 is the N-Channel logic enhancement mode power field effect transistor

(35 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

(33 views)

DTK110N15 www.din-tek.jp N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.0076 at VGS = 10 V 0.0081 at VGS = 7.5 V ID

(32 views)

isc N-Channel MOSFET Transistor IXFP110N15T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche vol

(30 views)

Silicon N-Channel Power MOSFET ○R CS10N15 A3 General Description： CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

(30 views)

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enh

(29 views)

BSC110N15NS5 MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

(29 views)

N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL DESCRIPTION The ME10N15 is the N-Channel logic enhancement mode power field effect transistor

(28 views)

METAL OXIDE VARISTOR 10mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Voltage (V 0

(26 views)

www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da

(26 views)

ZXT10N15DE6 SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ul

(24 views)

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enh

(24 views)

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH110N15T2 VDSS ID25 RDS(on) = 15

(24 views)

FDB110N15A — N-Channel PowerTrench® MOSFET April 2015 FDB110N15A N-Channel PowerTrench® MOSFET 150 V, 92 A, 11 mΩ Features • RDS(on) = 9.25 mΩ (Typ

(21 views)