10N15 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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DTK110N15 www.din-tek.jp N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.0076 at VGS = 10 V 0.0081 at VGS = 7.5 V ID

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isc N-Channel MOSFET Transistor IXFP110N15T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche vol

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Silicon N-Channel Power MOSFET ○R CS10N15 A4 General Description： CS10N15 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enh

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Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH110N15T2 VDSS ID25 RDS(on) = 15

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DARLINGTON COMPLEMENTARY POWER TRANSISTORS R BL10N15A BL10P15A MAIN CHARACTERISTICS IC VCEO PC (TO-247) 10A 150V 100W Package    APPLI

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Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enh

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UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS 1  DESCRIPTION The UTC 10N15 is an N-channel enhanceme

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METAL OXIDE VARISTOR 10mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Voltage (V 0

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BSC110N15NS5 MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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FDB110N15A — N-Channel PowerTrench® MOSFET April 2015 FDB110N15A N-Channel PowerTrench® MOSFET 150 V, 92 A, 11 mΩ Features • RDS(on) = 9.25 mΩ (Typ

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

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BSC110N15NS5SC MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • N-channel

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Silicon N-Channel Power MOSFET ○R CS10N15 A3 General Description： CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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ZXT10N15DE6 SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ul

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N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL DESCRIPTION The ME10N15 is the N-Channel logic enhancement mode power field effect transistor

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