UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary.
CR Micro
24
CS10N15A4 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS10N15 A4 General Description： CS10N15 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den.
CR Micro
24
CS10N15A3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS10N15 A3 General Description： CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den.
IXYS Corporation
11
IXFP110N15T2 - Power MOSFET
Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on) 150V 110A 13m N-Channel Enh.
Unisonic Technologies
9
10N15 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS 1 DESCRIPTION The UTC 10N15 is an N-channel enhanceme.
Intersil Corporation
8
RFP10N15 - N-Channel Power MOSFET
RFP10N15 Data Sheet March 1999 File Number 1445.3 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate pow.
Matsuki
8
ME10N15-G - N-Channel MOSFET
N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL DESCRIPTION The ME10N15 is the N-Channel logic enhancement mode power field effect transistor.
Harris Semiconductor
7
RFP10N12L - (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET
www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
IXYS Corporation
6
IXFA110N15T2 - Power MOSFET
Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on) 150V 110A 13m N-Channel Enh.
Harris Semiconductor
5
RFP10N15L - (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET
www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
JILIN SINO
5
BL10N15A - DARLINGTON COMPLEMENTARY POWER TRANSISTORS
DARLINGTON COMPLEMENTARY POWER TRANSISTORS R BL10N15A BL10P15A MAIN CHARACTERISTICS IC VCEO PC (TO-247) 10A 150V 100W Package APPLI.
Fairchild Semiconductor
4
FDB110N15A - MOSFET
FDB110N15A — N-Channel PowerTrench® MOSFET April 2015 FDB110N15A N-Channel PowerTrench® MOSFET 150 V, 92 A, 11 mΩ Features • RDS(on) = 9.25 mΩ (Typ.
Din-Tek
3
DTK110N15 - N-Channel MOSFET
DTK110N15 www.din-tek.jp N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.0076 at VGS = 10 V 0.0081 at VGS = 7.5 V ID .
INCHANGE
3
IXFP110N15T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXFP110N15T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche vol.
Zetex Semiconductors
2
ZXT10N15DE6 - 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXT10N15DE6 SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ul.
Matsuki
2
ME10N15 - N-Channel MOSFET
N-Channel 150-V (D-S) MOSFET ME10N15/ME10N15-G GENERAL DESCRIPTION The ME10N15 is the N-Channel logic enhancement mode power field effect transistor.
INCHANGE
2
IXFA110N15T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
INCHANGE
2
IXFH110N15T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
