10N50 Datasheet | Specifications & PDF Download

GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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Silicon N-Channel Power MOSFET CS10N50F A9R ○R General Description： CS10N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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MDP10N50 N-channel MOSFET 500V MDP10N50 N-Channel MOSFET 500V, 10.0 A, 0.75Ω General Description The MDP10N50 uses advanced Magnachip’s MOSFET Techn

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UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-220 The UTC 10N50 is a

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linea

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 10N50 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fa

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Silicon N-Channel Power MOSFET CS10N50 A8R ○R General Description： CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N N- CHANNEL MOSFET R MP10N50EI MAIN CHARACTERISTICS ID 10 A VDSS 500 V Rdson-max（@Vgs=10V） 0.70Ω Qg-typ 34.38nC Package   -  UPS

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MDF10N50 N-channel MOSFET 500V MDF10N50 N-Channel MOSFET 500V, 10 A, 0.75Ω General Description The MDF10N50 uses advanced MagnaChip’s MOSFET Technol

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linea

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HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EM

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ZXT10N50DE6 SuperSOT™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ul

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IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation

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HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDE

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FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features • 10A, 500V, RDS(on) = 0.

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IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operatio

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HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA E

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HGTP10N40F1D, HGTP10N50F1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR

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GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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