UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary.
UNISONIC TECHNOLOGIES
11N80 - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses.
Infineon
11N80C3 - Power Transistor
SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate.
UTC
11N80-C - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 11N80-C provide excellent RDS(ON), low gate charge and .
UTC
11N80-FL - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 11N80-FL 11A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N80-FL is a high voltage power MOSFET combines advanc.
Infineon Technologies
SPA11N80C3 - Power Transistor
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.
SemiHow
HFP11N80Z - 800V N-Channel MOSFET
HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Techno.
Din-Tek
DTP11N80SJ - N-Channel Super Junction Power MOSFET
DTN11N80SJ/DTP11N80SJ/DTP11N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) m.
Din-Tek
DTP11N80FSJ - N-Channel Super Junction Power MOSFET
DTN11N80SJ/DTP11N80SJ/DTP11N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) m.
Din-Tek
DTN11N80SJ - N-Channel Super Junction Power MOSFET
DTN11N80SJ/DTP11N80SJ/DTP11N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) m.
Advanced Power Technology
APT11N80BC3 - Super Junction MOSFET
APT11N80BC3 www.DataSheet4U.com 800V 11A 0.45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra low RDS(ON) • Low Miller Capaci.
Advanced Power Technology
APT11N80KC3 - Super Junction MOSFET
APT11N80KC3 www.DataSheet4U.com 800V 11A 0.450Ω Super Junction MOSFET TO-220 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capac.
Advanced Power Technology
APT11N80GC3 - Super Junction MOSFET
APT11N80GC3 www.DataSheet4U.com 800V 7.4A 0.500Ω Super Junction MOSFET TO-257 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capa.
IXYS
IXTM11N80 - Power MOSFET
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.
IXYS
IXTH11N80 - MegaMOS FET
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.
SemiHow
HFS11N80Z - 800V N-Channel MOSFET
HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Techno.
INCHANGE
SPW11N80C3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N80C3 ISPW11N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhanceme.
Microsemi
APT11N80BC3G - Super Junction MOSFET
APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy.
INCHANGE
APT11N80BC3G - N-Channel MOSFET
isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On.
Infineon Technologies
SPW11N80C3 - Cool MOS Power Transistor
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.
Infineon Technologies
SPP11N80C3 - Power Transistor
www.DataSheet4U.com Final data SPP11N80C3 SPA11N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOS™ Power Transistor Feature • New revolutionary high voltag.
