12N80 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 12N80 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using

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FKPF12N80 FKPF12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, ref

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UNISONIC TECHNOLOGIES CO., LTD 12N80-FC Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80-FC provide excellent RDS(ON), lo

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Silicon N-Channel Power MOSFET ○R CS12N80F A9RD General Description： VDSS 800 V CS12N80F A9RD, the silicon N-channel Enhanced ID 12 A VDMOSF

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancem

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancem

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancem

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancem

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 12N80P VDSS ID25 RDS(on) trr

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancem

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 800V TMAN12N80Z N-channe

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance BVDS

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