13N80 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N

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HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect

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HFH13N80 Dec 2005 HFH13N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A FEATURES  Originative New Design  Superior Avala

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N

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STFI13N80K5 N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package Datasheet - production data Features 1 23 I2PAKFP Figur

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isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V ·100% avalanche tested

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FQA13N80-F109 — N-Channel QFET® MOSFET FQA13N80-F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ Description This N-Channel enhancement mode power M

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STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 pac

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FQA13N80_F109 — N-Channel QFET® MOSFET FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ April 2014 Description This N-Channel enhancement

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MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con

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STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 pac

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FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate cha

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FQA13N80 800V N-Channel MOSFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC)

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FQAF13N80 March 2001 QFET FQAF13N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 pac

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STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 pac

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