16N25 Datasheet | Specifications & PDF Download

N-Channel 250-V (D-S) 175 °C MOSFET www.din-tek.jp DTU16N25 PRODUCT SUMMARY VDS (V) 250 rDS(on) (Ω) 0.165 at VGS = 10 V ID (A) 16 FEATURES • Trenc

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FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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SEMICONDUCTOR TECHNICAL DATA KF16N25D N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic

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MOSFET – N-Channel, QFET 250 V, 16 A, 270 mW FQD16N25C Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietar

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N R N-CHANNEL MOSFET JCS16N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg    UPS 16 A 250 V 0.30 Ω 9.5 nC APPLICATI

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High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH16N250CV1HV VCES = 2500V IC110 = 16A V CE(sat)  4.0V tfi(typ) = 250ns

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SEMICONDUCTOR TECHNICAL DATA KF16N25F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic

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N R N-CHANNEL MOSFET JCS16N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg    UPS 16 A 250 V 0.30 Ω 9.5 nC APPLICATI

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N R N-CHANNEL MOSFET JCS16N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg    UPS 16 A 250 V 0.30 Ω 9.5 nC APPLICATI

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FQD16N25C — N-Channel QFET® MOSFET FQD16N25C N-Channel QFET® MOSFET 250 V, 16 A, 270 mΩ Features • 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V,

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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www.DataSheet4U.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features • 15.6A, 250V, RDS(

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FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount

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FQPF16N25C — N-Channel QFET® MOSFET FQPF16N25C N-Channel QFET® MOSFET 250 V, 15.6 A, 270 mΩ Features • 15.6 A, 250 V, RDS(on) = 270 mΩ (Max) @ VGS =

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