1N80 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses

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www.vishay.com SiHG11N80E Vishay Siliconix E Series Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(

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Electronic Alliance www.eaa.net.au MZ31 Series for time delay start for lighting MZ31 series of PTC Thermistor are applicable to various types of fluo

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UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-C provide excellent RDS(ON), low gate charge and

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Single D1N80 RectifierDiode ■ OUTLINE Package：AX057 Unit：mm П  800V1A IFSM Feature HighVoltage LargeIFSM ˎ ᶃ ᶄ  П  ˎ ᶃ ᶄ ˎ  ೀ

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance :

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APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy

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BRS1N80 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-92 N MOS 。N-CHANNEL MOSFET in a TO-92 Plastic Package. / Features ,,. Low gate charge, lo

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SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100%

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Electronic Alliance www.eaa.net.au MZ31 Series for time delay start for lighting MZ31 series of PTC Thermistor are applicable to various types of fluo

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Electronic Alliance www.eaa.net.au MZ31 Series for time delay start for lighting MZ31 series of PTC Thermistor are applicable to various types of fluo

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.

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www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da

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www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25

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Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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UNISONIC TECHNOLOGIES CO., LTD 1N80 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced

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TSM1N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Fast switching AP

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