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1N80 Datasheet, Features, Application

1N80 N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N80 1A, 800V N-CHA.

Huajing Microelectronics

CS1N80A1H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description: CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
1.0 · rating-1
UNISONIC TECHNOLOGIES

11N80 - N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses.
1.0 · rating-1
Huajing Microelectronics

CS1N80A3H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N80 A3H ○R General Description: CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
1.0 · rating-1
Infineon

11N80C3 - Power Transistor

SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate.
1.0 · rating-1
Infineon Technologies

SPA11N80C3 - Power Transistor

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.
1.0 · rating-1
SemiHow

HFU1N80 - N-Channel MOSFET

HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A FEATURES  Originative New Design.
1.0 · rating-1
UTC

11N80-C - N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-C provide excellent RDS(ON), low gate charge and .
1.0 · rating-1
SEMIPOWER

SW1N80A - MOSFET

SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100% .
1.0 · rating-1
Wing On

PFM1N80 - N-Channel MOSFET

Oct 2008 PFM1N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl.
1.0 · rating-1
SSDI

1N8018 - HYPER FAST SOFT RECOVERY RECTIFIER

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power..
1.0 · rating-1
GeneSiC

1N8033-GA - High Temperature Silicon Carbide Power Schottky Diode

1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero rev.
1.0 · rating-1
UTC

1N80 - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N80 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced .
1.0 · rating-1
SSDI

1N8022 - HYPER FAST RECOVERY RECTIFIER

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power..
1.0 · rating-1
Huajing Microelectronics

CS1N80A4H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N80 A4H ○R General Description: CS1N80 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
1.0 · rating-1
Silan Microelectronics

SVD1N80T - 800V N-CHANNEL MOSFET

SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transist.
1.0 · rating-1
Silan Microelectronics

SVD1N80BTR - 800V N-CHANNEL MOSFET

SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transist.
1.0 · rating-1
SemiHow

HFG1N80 - N-Channel MOSFET

HFG1N80_Preliminary HFG1N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Techno.
1.0 · rating-1
Vishay

SiHW21N80AE - Power MOSFET

www.vishay.com SiHW21N80AE Vishay Siliconix E Series Power MOSFET D TO-247AD G D S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(o.
1.0 · rating-1
JCET

CJU01N80 - N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU01N80 N-Channel Power MOSFET V(BR)DSS 800V RDS(on)M.
1.0 · rating-1
Silikron Semiconductor

SSF1N80G5 - MOSFET

                                 Main Product Characteristics: VDSS 800V RDS(on) ID 13Ω (typ.) 1A Features and Benefits: SOT223   Advanced MOS.
1.0 · rating-1
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