1SS41 Datasheet | Specifications & PDF Download

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK • Small package • Low f

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Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS417 1: Cathod

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03

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1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marki

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Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (t

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Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS416 1: Cathod

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P1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Voltage 40 V Current 100 mA Features  Small package  Low forward voltage : VF(3)=0.51V(typ.)  Low r

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse curre

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application • Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5m

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Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathod

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1SS417TM HIGH SPEED SWITCHING APPLICATION FEATURES • Small package • Low forward voltage : VF(3)=0.56V(typ.) • Low reverse current : I R=5µA (Max.) •

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