20-Inch Datasheet | Specifications & PDF Download

isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Po

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INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching S

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

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isc N-Channel MOSFET Transistor 20N03 ·FEATURES ·Drain Current- ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resi

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Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv

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isc N-Channel MOSFET Transistor IRFB31N20D，IIRFB31N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤82mΩ ·Enhancement mode ·Fast Switching

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INCHANGE Semiconductor isc Three Terminal Positive Voltage Regulator 7805 FEATURES ·Output current in excess of 1.5A ·Output voltage of 5V ·Interna

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DATA SHEET www.onsemi.com 1/1.8-inch 20 MP CMOS Digital Image Sensor AR2020 General Description The onsemi AR2020 is a stacked 1/1.8−inch back side i

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N15 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Stat

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement

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isc Thyristors INCHANGE Semiconductor CLA50E1200HB DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar pas

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with inte

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