20N06 Datasheet | Specifications & PDF Download

MOSFET – Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Mi

Rating: 1 ★ (8 votes)

NTD20N06, NTDV20N06 MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, conver

Rating: 1 ★ (7 votes)

CMD20N06L/CMU20N06L 60V N-Channel MOSFET General Description The 20N06 combines advanced trench MOSFET technology .This advanced technology has been

Rating: 1 ★ (6 votes)

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET The U TC UTT 120N06 is a n N

Rating: 1 ★ (6 votes)

MOSFET – Power, N-Channel, DPAK 20 A, 60 V NTD20N06, NTDV20N06 Description Designed for low voltage, high speed switching applications in power suppli

Rating: 1 ★ (6 votes)

Rating: 1 ★ (6 votes)

FQP20N06L — N-Channel QFET® MOSFET FQP20N06L N-Channel QFET® MOSFET 60 V, 21 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is pro

Rating: 1 ★ (5 votes)

STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD20N06 s s s s s s s s V DSS 60 V R DS( on)

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STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω <

Rating: 1 ★ (5 votes)

PHD20N06T N-channel TrenchMOS standard level FET Rev. 02 — 1 December 2009 Product data sheet 1. Product profile 1.1 General description Standard l

Rating: 1 ★ (5 votes)

IAUC120N06S5N017 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal lev

Rating: 1 ★ (5 votes)

IAUC120N06S5N011 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

Rating: 1 ★ (5 votes)

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 mW, 27 A NTMFD020N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1

Rating: 1 ★ (4 votes)

FQB20N06 / FQI20N06 May 2001 QFET FQB20N06 / FQI20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect t

Rating: 1 ★ (4 votes)

FQPF20N06L — N-Channel QFET® MOSFET FQPF20N06L N-Channel QFET® MOSFET 60 V, 15.7 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is

Rating: 1 ★ (4 votes)

ADV ADM20N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO251 2 1 23 Absolute Maxim

Rating: 1 ★ (4 votes)

STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω <

Rating: 1 ★ (4 votes)