20N06 Datasheet | Specifications & PDF Download

IAUC120N06S5L011 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

(28 views)

ADV ADM20N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO252 2 1 2 3 Absolute Maxi

(26 views)

120N06N-VB TO220 120N06N-VB TO220 Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS

(24 views)

MOSFET – Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Mi

(22 views)

Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

(20 views)

CMD20N06L/CMU20N06L 60V N-Channel MOSFET General Description The 20N06 combines advanced trench MOSFET technology .This advanced technology has been

(20 views)

CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super hig

(20 views)

CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super hig

(20 views)

N-Channel 60 V (D-S) MOSFET DTU20N06 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.074 at VGS = 10 V 0.078 at VGS = 4.5 V ID (A)a 20 13

(19 views)

ADV ADM20N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO251 2 1 23 Absolute Maxim

(19 views)

(19 views)

Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on)  60V 220A 4m N-Ch

(18 views)

Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on)  60V 220A 4m N-Ch

(17 views)

Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on)  60V 220A 4m N-Ch

(17 views)

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche voltage and curren

(17 views)

Silicon N-Channel Power MOSFET ○R CS120N06 C8 General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

(17 views)

() CRST020N06N2Z SkyMOS2 N-MOSFET 60V, 1.7mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excel

(17 views)

IAUC120N06S5N032 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

(17 views)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™ Designer's Data Sheet MTP20N06V TMOS POW

(16 views)

www.DataSheet4U.com RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT

(16 views)