20N06 Datasheet | Specifications & PDF Download

HM20N06KA N-Channel Enhancement Mode Power MOSFET Description The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) w

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YMP120N06 N-Channel Enhancement Mode Power MOSFET Features ● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ； ● Low gate charge ● Low Crss (typ

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™ Designer's Data Sheet MTP20N06V TMOS POW

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MOSFET – Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Mi

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell des

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Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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ADV ADM20N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO252 2 1 2 3 Absolute Maxi

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IAUC120N06S5L011 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e

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Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-

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PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard

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MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and

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CYStech Electronics Corp. Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB020

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Stati

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MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Application

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MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 mW, 27 A NVMFD020N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to

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PHB20N06T N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2009 Product data sheet 1. Product profile 1.1 General description Standard

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Sur

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