20N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Stati

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MOSFET – Power, N-Channel, DPAK 20 A, 60 V NTD20N06, NTDV20N06 Description Designed for low voltage, high speed switching applications in power suppli

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IAUC120N06S5L011 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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SLP120N06T SLP120N06T 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanc

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IAUC120N06S5N032 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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IAUC120N06S5N022 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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Description AP120N06BD 60V N-Channel Enhancement Mode MOSFET The AP120N06BD uses advanced trench technology to provide excellent RDS(ON), low gate

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YMP120N06 N-Channel Enhancement Mode Power MOSFET Features ● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ； ● Low gate charge ● Low Crss (typ

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NTD20N06, NTDV20N06 MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, conver

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IAUC120N06S5N011 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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IAUC120N06S5N017 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal lev

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MOSFET – Power, Single N-Channel, SO8FL 60 V, 19.6 mW, 28 A NTMFS020N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Mi

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PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e

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ADV ADM20N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO251 2 1 23 Absolute Maxim

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IAUC120N06S5L032 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic leve

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FQPF20N06L — N-Channel QFET® MOSFET FQPF20N06L N-Channel QFET® MOSFET 60 V, 15.7 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell des

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www.DataSheet4U.com RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT

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