22-channel Datasheet | Specifications & PDF Download

Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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BGT24LTR22 BGT24LTR22 Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications Features  24 GHz transceiver MMIC (2 TX, 2 RX)  Fully i

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XP2322GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Package

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Audio ICs 5-channel stereo graphic equalizer BA3822LS / BA3822FS / BA3823LS / BA3824LS The BA3822LS, BA3822FS, BA3823LS, and BA3824LS are monolithic,

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DESCRIPTION PT2258 is a 6-Channel Electronic Volume Controller IC utilizing CMOS Technology specially designed for the new generation of AV Multi-Chan

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® TDA7382 4 x 22W FOUR BRIDGE CHANNELS CAR RADIO AMPLIFIER HIGH OUTPUT POWER CAPABILITY: 4 x 30W max./4Ω EIAJ 4 x 22W/4Ω @ 14.4V, 1KHz, 10% 4 x 18.5

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Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial

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Click here for production status of specific part numbers. MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The MAX220–MAX249 family of line drivers/receivers is intended

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XP5322GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteri

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UNISONIC TECHNOLOGIES CO., LTD UT7422-H 40A, 30V N-CHANNEL POWER MOSFET Power MOSFET 1  DESCRIPTION The UTC UT7422-H is a N-channel Power Mosfet, i

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SGM7220 USB Type-C Configuration Channel Logic and Port Control GENERAL DESCRIPTION The SGM7220 enables USB Type-C ports with the Configuration Chann

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GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linea

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SHENZHENNSIWAYTECHNOLOGY CO.,LTD NS4225 Nov. 2018 V1.0 NS4225 23W D PBTL/BTL 1  ： 10W×2(8Ω / VCC=12V/ THD+N=10%/ BTL ) 23W×2(8Ω / VCC=18V/ TH

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NSi822xC High Reliability Dual-Channel Digital Isolators Datasheet (EN) 1.3 Product Overview The NSi822xC devices are high reliability dual-channel d

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www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE

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Isc N-Channel MOSFET Transistor AOD2922 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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