22-channel datasheet

Toshiba

50JR22 - Silicon N-Channel IGBT

Sep 15, 2018 · 104 Hits (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-sp...

Lowpowersemi

LP2201 - Dual Channel Ultra-Fast CMOS LDO Regulator

Sep 14, 2018 · 60 Hits include current limiting, over temperature, output short circuit protection. LP2201 is short circuit thermal folded back protected. LP2201 lowers its ...

INCHANGE

IRFB4227 - N-Channel MOSFET

Oct 12, 2020 · 41 Hits ·Static drain-source on-resistance: RDS(on) ≤24mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro...

Toshiba

30J122A - Silicon N-Channel IGBT

Dec 19, 2020 · 39 Hits (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ....

Inchange Semiconductor

5N50 - TO-220F N-Channel MOSFET

Jul 10, 2016 · 33 Hits GS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A...

INCHANGE

AOD2922 - N-Channel MOSFET

Oct 5, 2020 · 33 Hits ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for...

FNK

FNK22001A - N-Channel Power MOSFET

Mar 23, 2018 · 29 Hits ● VDS =85V,ID =210A RDS(ON) <4.1mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good...

Toshiba

GT50JR22 - Silicon N-Channel IGBT

Mar 22, 2015 · 29 Hits (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-sp...

Sanyo

LA3220 - 2-Channel Equalizer Amplifier

Jul 20, 2018 · 27 Hits • Dual pre-amp with built-in ALC (pre-amp × 2 + ALC × 2). • Due to high gain, recording amp can be formed separately (variable monitor possible). • AL...

szsanjing

SJ2206B - 2.3W dual-channel audio power amplifier

May 31, 2012 · 27 Hits ™⊃∝∇≠ ×→® ℑ′⊂∑⊃ , Ργ=0 Ω, ςι=150µΩ φ=100Ηζ ℑ′⊂∑⊃ Ργ=0Ω ℑ′⊂∑⊃ Ργ=10κΩ ℑ′⊂∑⊃ Ργ=10κΩ ςο=0δΒµ ℑ′⊂∑⊃ ∝∩⊕ ςι=0ς, Στερεο ℑ′⊂∑⊃ ∝∩⊕ ℑ′⊂∑⊃ ΤΗ∆=1...

China Hua Jing Electronics

CD1622CB - 110mw X 2 Dual-channel audio power amplifier

May 5, 2011 · 25 Hits jklmno \ p q r U L u K*vwxy z{xy jklmno \ p q r...

DDC

SD-14622DX-114 - 2-Channel Synchro / Resolver to Digital Converter

Jan 24, 2008 · 24 Hits • Synthesized Reference Option • 1 Minute Accuracy Available (“S” Option only) • Single +5 V Power Supply • 10-, 12-, 14- or 16-Bit Programmable Resol...

Renesas

K2221 - Silicon N-Channel MOSFET

Jul 27, 2016 · 23 Hits • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characte...

Renesas

RJK0822SPN - Silicon N Channel Power MOS FET

Mar 1, 2016 · 21 Hits • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power s...

Toshiba

30J122 - Silicon N-Channel IGBT

Dec 19, 2020 · 20 Hits , etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handb...

NOVOSENSE

NSI8222 - High Reliability Dual-Channel Digital Isolators

Aug 25, 2024 · 20 Hits  Up to 5000Vrms Insulation voltage  Date rate: DC to 150Mbps  Power supply voltage: 2.5V to 5.5V  All devices are AEC-Q100 qualified  High CMTI: ...

SiTI

PS224 - 4-Channel Secondary Monitoring IC

Mar 11, 2014 · 19 Hits • • • • • • • • • • Over/Under-voltage protection and lock out Over-current protection and lock out Additional protection input Fault protection outpu...

MagnaChip

MDP1922 - Single N-channel MOSFET

Apr 10, 2017 · 17 Hits  VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.4 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D GDS TO-220 Absolute Maximum Ratings (T...

Fairchild Semiconductor

FQA22P10 - 100V P-Channel MOSFET

Apr 1, 2005 · 17 Hits • • • • • • • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tes...