INCHANGE Semiconductor isc N-Channel MOSFET Transi.
Infineon Technologies
02N120 - SKP02N120
www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to pre.
Infineon Technologies AG
GB02N120 - SGB02N120
www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta.
schneider
XS2N12PC410D - inductive sensor
Product datasheet Characteristics XS2N12PC410D inductive sensor XS2 M12 - L53mm - brass - Sn4mm - 12..24VDC - M12 Main Range of product Series name .
UTC
2N120 - 1200V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N120 2.0A, 1200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N120 provide excellent RDS(ON), low gate charge and ope.
Intersil Corporation
2N120CND - N-Channel IGBT
HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes Th.
STMicroelectronics
STP12N120K5 - N-CHANNEL Power MOS MOSFET
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247.
ON Semiconductor
NTH4L022N120M3S - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID M.
Infineon
ISC032N12LM6 - MOSFET
ISC032N12LM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, logic level • Very low on-resistance RDS(on) • Excellent gate charge x .
Vanguard Semiconductor
VSM012N12MS - N-Channel Advanced Power MOSFET
Features N-Channel，5V Logic Level Control Enhancement mode Fast Switching Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test P.
Infineon Technologies AG
SKB02N120 - IGBT
SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time .
FNK
FNK12N12T - N-Channel Power MOSFET
FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK12N12T uses advanced trench technology and design to provide excellent RDS(ON) with low .
Motorola
2N1204 - PNP Transistor
A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current swi.
Infineon Technologies
SGD02N120 - IGBT
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • .
IXYS Corporation
IXGA12N120A3 - GenX3 1200V IGBTs
GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC.
IXYS Corporation
IXYH82N120C3 - 1200V XPT IGBT
Advance Technical Information 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYH82N120C3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = .
Motorola
2N1204A - PNP Transistor
A 2N 1204, (GERMANIUM) 2N1494,A 2N1495 2N 1496 2N2096 2N2097 2N2099 2N2100 PNP germanium epitaxial mesa transistors for highspeed, high-current swi.
Infineon
IPC302N12N3 - MOSFET
MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC302N12N3 Data Sheet Rev. 2.5 Final Industrial.
