2N12 Datasheet | Specifications & PDF Download

GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol V

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Advance Technical Information GenX3TM 1200V IGBTs IXGK82N120B3 IXGX82N120B3 High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching VCES = IC110 = V

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Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching V CES I C110 VCE(sat)

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GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol V

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Advance Technical Information GenX3TM 1200V IGBTs IXGK82N120B3 IXGX82N120B3 High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching VCES = IC110 = V

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

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www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta

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STH2N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 7.25 Ω typ., 1.5 A, MDmesh K5 Power MOSFET in an H²PAK-2 package TAB 23 1 H2PAK-2 D(TAB)

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www.i-t.su info@i-t.su тел: (495) 739-09-95, 739-09-96 Реле серии D2N Реле с двумя переключающими контактами (DPDT). Макс. ток переключения контакт

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N-Channel Trench Power MOSFET CS72N12\ CSN72N12 General Description The 72N12 is N-channel MOS Field Effect Transistor designed for high current swi

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •

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UNISONIC TECHNOLOGIES CO., LTD 2N120-E4 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge a

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www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to pre

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Product datasheet Characteristics XS2N12PC410D inductive sensor XS2 M12 - L53mm - brass - Sn4mm - 12..24VDC - M12 Main Range of product Series name

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S Features • Typ. RDS(on) = 22 mW @

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HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes Th

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HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

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