2N12 Datasheet | Specifications & PDF Download

N-Channel Trench Power MOSFET CS72N12\ CSN72N12 General Description The 72N12 is N-channel MOS Field Effect Transistor designed for high current swi

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S Features • Typ. RDS(on) = 22 mW @

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Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L NVBG022N120M3S Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate

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1 Watt o Ultra-Miniature Size o Unregulated Output www.DataSheet4U.com 7 Pin SIL Package Z o 1000VDC Isolation o 3000VDC Isolation Option (add Suffi

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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N-Channel Trench Power MOSFET CS72N12\ CSN72N12 General Description The 72N12 is N-channel MOS Field Effect Transistor designed for high current swi

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Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching V CES I C110 VCE(sat)

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to pre

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID M

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UNISONIC TECHNOLOGIES CO., LTD 2N120-E4 2.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N120-E4 provide excellent RDS(ON), low gate charge a

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGV12N120D/D Product Preview Data Sheet Insulated Gate Bipolar Transistor with Anti-P

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www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta

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STH12N120K5-2, STP12N120K5 STW12N120K5, STWA12N120K5 Datasheet N-channel 1200 V, 620 mΩ typ., 12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247

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Features  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested,100% Rg Tested VSP012N12MS-G 120V/42

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SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Sh

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •

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www.i-t.su info@i-t.su тел: (495) 739-09-95, 739-09-96 Реле серии D2N Реле с двумя переключающими контактами (DPDT). Макс. ток переключения контакт

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Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditio

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