2N5551 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbo

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www.DataSheet4U.com CORPORATION G2N5551 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B

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ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors www.DataSheet4U.com for general purpose, high voltage amplifier applications. As compleme

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig

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Elektronische Bauelemente 2N5551 600mA, 160V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig

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NPN General-Purpose Amplifier 2N5551 Description This device is designed for general−purpose high−voltage amplifiers and gas discharge display driver

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANA

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig

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Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=1

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2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Ap

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