2N5550 & 2N5551 Silicon NPN Transistor Audio Power.
Motorola
2N5551 - Amplifier Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT.
SEMTECH ELECTRONICS
ST2N5551 - NPN Silicon Epitaxial Planar Transistor
ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors www.DataSheet4U.com for general purpose, high voltage amplifier applications. As compleme.
Inchange Semiconductor
2N5551 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V).
SeCoS
2N5551 - NPN Transistor
Elektronische Bauelemente 2N5551 600mA, 160V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead .
KEC
2N5551C - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
Multicomp
2N5551 - Bipolar Transistor
Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base.
KEC
2N5551 - NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
Motorola
P2N5551 - AMPLIFIER TRANSISTORS
T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbo.
KEC
2N5551S - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
UTC
2N5551 - HIGH VOLTAGE SWITCHING TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=1.
CENTRAL SEMICONDUCTOR
2N5551 - SILICON NPN TRANSISTORS
2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN t.
Hi-Sincerity Mocroelectronics
H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANA.
Fairchild Semiconductor
2N5551 - NPN General Purpose Amplifier
2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for.
Philips
2N5551 - NPN high-voltage transistors
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Ap.
ON Semiconductor
2N5551 - NPN Amplifier
NPN General-Purpose Amplifier 2N5551 Description This device is designed for general−purpose high−voltage amplifiers and gas discharge display driver.
KEC
2N5551SC - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
NTE
2N5551 - Silicon NPN Transistor
2N5550 & 2N5551 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package Description: The 2N5550 and 2N5551 is a silicon NPN amplifier transis.
CDIL
2N5551 - NPN Transistor
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N555.
GTM
G2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com CORPORATION G2N5551 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B.
STMicroelectronics
2N5551HR - Hi-Rel NPN bipolar transistor
2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B .
