2N5551 (Motorola)
Amplifier Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RAT
(35 views)
2N5551 (ON Semiconductor)
NPN Amplifier
NPN General-Purpose Amplifier
2N5551
Description This device is designed for general−purpose high−voltage
amplifiers and gas discharge display driver
(29 views)
2N5551 (Inchange Semiconductor)
Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)
(13 views)
2N5551C (KEC)
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L
(10 views)
H2N5551 (Hi-Sincerity Mocroelectronics)
NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5
H2N5551
NPN EPITAXIAL PLANA
(9 views)
2N5551S (KEC)
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L
(9 views)
2N5551TA (ON Semiconductor)
NPN Amplifier
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
March March 20188
2N5551 / MMBT5551 NPN General-Purpose Amplifier
Description
This device is desig
(9 views)
2N5551TF (ON Semiconductor)
NPN Amplifier
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
March March 20188
2N5551 / MMBT5551 NPN General-Purpose Amplifier
Description
This device is desig
(8 views)
2N5551 (Multicomp)
Bipolar Transistor
Bipolar Transistor
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base
(7 views)
2N5551SC (KEC)
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L
(7 views)
2N5551HR (STMicroelectronics)
Hi-Rel NPN bipolar transistor
2N5551HR
Datasheet
Rad-Hard 160 V, 0.5 A NPN bipolar transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
(7 views)
ST2N5551 (SEMTECH ELECTRONICS)
NPN Silicon Epitaxial Planar Transistor
ST 2N5550 / 2N5551
NPN Silicon Epitaxial Planar Transistors
www.DataSheet4U.com
for general purpose, high voltage amplifier applications. As compleme
(7 views)
G2N5551 (GTM)
NPN EPITAXIAL PLANAR TRANSISTOR
www.DataSheet4U.com
CORPORATION
G2N5551
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
(6 views)
P2N5551 (Motorola)
AMPLIFIER TRANSISTORS
T
P2N5550 P2N5551
CASE 29-02, STYLE 17 TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating
Symbo
(6 views)
2N5551 (KEC)
NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L
(5 views)
2N5551 (UTC)
HIGH VOLTAGE SWITCHING TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2N5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* High collector-emitter voltage: VCEO=1
(5 views)
2N5551 (NTE)
Silicon NPN Transistor
2N5550 & 2N5551 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package
Description: The 2N5550 and 2N5551 is a silicon NPN amplifier transis
(5 views)
2N5551 (CDIL)
NPN Transistor
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N555
(5 views)
2N5551 (SeCoS)
NPN Transistor
Elektronische Bauelemente
2N5551
600mA, 160V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead
(5 views)
2N5551BU (ON Semiconductor)
NPN Amplifier
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
March March 20188
2N5551 / MMBT5551 NPN General-Purpose Amplifier
Description
This device is desig
(5 views)
