UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminar.
2N7002K - Small-Signal MOSFET
DATA SHEET www.onsemi.com Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 2N7002K, 2V7002K Features • ESD Protected • Low RDS(on) • Surf.2N7002K - N-channel MOSFET
Elektronische Bauelemente 2N7002K 0.3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spec.2N7002 - N-Channel Power Mosfet
Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES High Density Cell Design For Low Pb RDS(ON). Lead-.2N7002K - N-channel MOSFET
SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc.2N7002 - N-channel FET
N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are .2N7002D - 60V N-Channel MOSFET
Chip Integration Technology Corporation 2N7002D 60V N-Channel MOSFET N-Channel MOSFET – ESD Protected Features: ● Simple Drive Requirement ● Small .2N7002K - N-Channel MOSFET
Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High satu.2N7002K - N-Channel MOSFET
Features • Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1.2N7002 - N-channel MOSFET
2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.AM12N70P - N-Channel MOSFET
Analog Power N-Channel 700-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica.S2N7002T-C - N-Channel Plastic-Encapsulate MOSFETS
Elektronische Bauelemente S2N7002T-C 115mA, 60V, RDS(ON) 7.5Ω N-Channel Plastic-Encapsulate MOSFETS FEATURES Low On-Resistance Low Gate Threshol.H2N7002SN - N-Channel MOSFET
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200605 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H2N7002SN N-Channel MOSF.2N7000 - TMOS FET Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M.2N7000 - N-channel MOSFET
DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto.2N7000 - N-Channel MOSFET
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B.2N7002DW - DUAL N-CHANNEL MOSFET
Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET has been designed to minimi.EMD02N70CS - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 6Ω ID 2A G UIS, 100% Tested S Pb.2N7002KW - N-channel MOSFET
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-.2N7002K - N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE * Description: * Gate Pretection Diode SOURCE 2 The 2N7002K utilized .2N7002 - N-Channel Enhancement Mode Power MOSFET
2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.