2N70-M Datasheet | Specifications & PDF Download

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2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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Description AP2N7002AL 60V N-Channel Enhancement Mode MOSFET The AP2N7002AL uses advanced trench technology to provide excellent RDS(ON), low gate c

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AP02N70EJ-HF-VB www.VBsemi.com AP02N70EJ-HF-VB Datasheet N-Channel 700 V (D-S) Supper Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 7

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AP2N7002K-HF-VB AP2N7002K-HF-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V I

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Description AP2N7002BI 60V N-Channel Enhancement Mode MOSFET The AP2N7002BI uses advanced trench technology to provide excellent RDS(ON), low gate c

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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General Description FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power fi

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CRMLTL2N7002K N-Channel 60V, 1.7Ω Typ. Power MOSFET Description Features l 60V, 0.3A RDS(ON) Typ = 1.7 Ω @ VGS = 10V RDS(ON) Typ = 2.0 Ω @ VGS =

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ME2N7002E-VB ME2N7002E-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA)

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AP2N7002K-VB AP2N7002K-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA)

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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are

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TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

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2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switc

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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