2N70-M Datasheet | Specifications & PDF Download

2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS

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2N7000CSM MECHANICAL DATA Dimensions in mm (inches) 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012

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N-Channel MOSFET ESD Protected 2000V Transistor 2N7000K N-Channel MOSFET ESD Protected 2000V Transistor Features • ESD protected 2000V • High densi

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RD

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2N706,A,B (2N706 JAN AVAILABLE) CASE 22, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage

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2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2 at VGS = 10 V 60 4 at VGS = 4.5 V VGS(th) (V)

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2N702 (SILICON) 2N703 CASE 22 (TO·18) NPN silicon annular transistors designed for lowlevel, high-speed switching applications. MAXIMUM RATINGS (T.

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2N702 (SILICON) 2N703 CASE 22 (TO·18) NPN silicon annular transistors designed for lowlevel, high-speed switching applications. MAXIMUM RATINGS (T.

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2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhanceme

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-. —. —-..-.. .,, — “,.. . . .- N-CHANNEL ISSUE 2MARCH ENHANCEMENT MODE VERTICAL DMOS FET 94 FEATURES * *R 60 Volt VcEo 0S(0.) = 5 ‘2 2N700

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2N705 (GERMANIUM) CA(TSOE-182)2 olleetor connected to else PNP germanium mesa transistor for high-speed switching applications .. MAXIMUM RATIN

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2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General descr

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