2N7002DW Datasheet | Specifications & PDF Download

2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low T

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NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) 8Ω

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2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • D

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Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANIC

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2N7002DWS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 4.0Ω @ VGS = 10V 4.1Ω @ VGS = 5V 5.0Ω @ VGS = 4V ID Max TA

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Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET is designed to meet the str

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 • Pb−Free Package is Available. L2N7002DW1T1G/T3G MAXIMUM RATIN

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 • Pb−Free Package is Available. L2N7002DW1T1G/T3G MAXIMUM RATIN

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NEW PRODUCT 2N7002DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS 60V RDS(ON) Max 3.0Ω @ VGS = 10V 4.0Ω @

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2N7002DW Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • M

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N-Channel MOSFET – ESD Protected ME2N7002DW(Green) GENERAL DESCRIPTION The ME2N7002DW is the N-Channel logic enhancement mode power field effect tra

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L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product complianc

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OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according t

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UNISONIC TECHNOLOGIES CO., LTD 2N7002DW 300mA, 60V DUAL N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002DW uses advanced technology to provide exce

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW Dual N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@1

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Field Effect Transistor N-Channel, Enhancement Mode 2N7002DW Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low

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Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET has been designed to minimi

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