2N7002E Datasheet | Specifications & PDF Download

N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723 • Pb−Free Package is Available. • ESD Protected:2000V • S- Pr

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2N7002E-T1-GE3-VB 2N7002E-T1-GE3-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10

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ME2N7002E-VB ME2N7002E-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA)

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723 • Pb−Free Package is Available. • ESD Protected:2000V • S- Pr

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TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on),

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N-Channel 60V MOSFET Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2

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N-Channel MOSFET ME2N7002E-G(Green) GENERAL DESCRIPTION The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced usin

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2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3Ω @ VGS = 10V ID Max TA = +25°C 300mA Features and Benefits • Lo

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Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 2N7002E Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technolog

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2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Fiel

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N-Channel 60 V (D-S) MOSFET 2N7002E Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 3 at VGS = 10 V ID (mA) 240 FEATURES • Halogen-free

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Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET (N-Channel) Features • High density cell design for low RDS(ON). • Voltage contro

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CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is produced using high cell den

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CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V

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QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high ce

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HY2N7002E N-Channel Enhancement Mode MOSFET Feature  60V/200mA RDS(ON)= 2.4Ω(typ.) @ VGS = 10V RDS(ON)= 3.0Ω(typ.) @ VGS = 5V RDS(ON)= 3.1Ω(typ.) @

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