2N80-C Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag

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FQPF2N80 September 2000 QFET FQPF2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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UNISONIC TECHNOLOGIES CO., LTD 12N80 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using

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FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power

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UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi

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FKPF12N80 FKPF12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, ref

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FKPF2N80 FKPF2N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refri

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FQB2N80 / FQI2N80 September 2000 QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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FQB2N80 / FQI2N80 September 2000 QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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UNISONIC TECHNOLOGIES CO., LTD 2N80 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance

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isc N-Channel MOSFET Transistor IXTP2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage

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Silicon N-Channel Power MOSFET ○R CS12N80F A9RD General Description： VDSS 800 V CS12N80F A9RD, the silicon N-channel Enhanced ID 12 A VDMOSF

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P2N80-VB P2N80-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 850 V

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FQP2N80 September 2000 QFET FQP2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current

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isc N-Channel MOSFET Transistor IXTU2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage

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FQPF218YDTU N-Channel QFET® MOSFET FQPF2N80YDTU N-Channel QFET® MOSFET 80 V, 1.5 A, Ω July 2013 Description Features This N-Channel enhance

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 2

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www.vishay.com SiHD2N80E Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D D G GS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. R

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