DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICO.
Rectron
2SA812 - SOT-23 BIPOLAR TRANSISTORS
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA812 FEATURES * Power dissipation PCM : 0.2 W(Tamb=25O.
BLUE ROCKET ELECTRONICS
2SA812 - Silicon PNP transistor
2SA812 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SC1623 。 Complem.
MCC
2SA812-M6 - PNP Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
WEITRON
2SA812 - PNP Transistor
PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Vo.
Kexin
2SA812 - PNP Transistors
SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V .
Leshan Radio Company
L2SA812SLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr.
MCC
2SA812-M4 - PNP Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
MCC
2SA812-M5 - PNP Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
MCC
2SA812-M7 - PNP Transistor
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
WILLAS
2SA812RLT1 - General Purpose Transistors
WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free P.
JCET
2SA812 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATURES z Complementary to 2SC1623.
WILLAS
2SA812QLT1 - General Purpose Transistors
WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free P.
DC COMPONENTS
2SA812 - PNP Transistor
DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA812 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio.
GME
2SA812 - Silicon Epitaxial Planar Transistor
Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. (VCE=-6.0V,IC=.
TRANSYS
2SA812 - Plastic-Encapsulated Transistors
Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA812 FEATURES Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) .
SeCoS Elektronische Bauelemente
2SA812K - PNP Transistor
2SA812K Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead f.
Leshan Radio Company
L2SA812QLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr.
Leshan Radio Company
L2SA812RLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr.
Leshan Radio Company
L2SA812SLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr.
Leshan Radio Company
L2SA812QLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812Q.