2SA812-M6 (MCC)
PNP Transistor
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% #
(75 views)
2SA812 (NEC)
PNP Transistor
DATA SHEET
SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Complementary to 2SC1623A • High DC Current Gain: hFE =
(30 views)
2SA812-M7 (MCC)
PNP Transistor
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% #
(28 views)
2SA812-M4 (MCC)
PNP Transistor
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% #
(25 views)
2SA812-M5 (MCC)
PNP Transistor
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% #
(24 views)
2SA812 (HOTTECH)
PNP Transistor
Plastic-Encapsulate Transistors
FEATURES
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812
(23 views)
2SA812SLT1 (WILLAS)
General Purpose Transistors
WILLAS
2SA812xLTF1MT1H2R0U-M+
1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free P
(21 views)
2SA812RLT1 (WILLAS)
General Purpose Transistors
WILLAS
2SA812xLTF1MT1H2R0U-M+
1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free P
(21 views)
L2SA812QLT1G (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr
(20 views)
L2SA812SLT1G (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr
(20 views)
2SA812 (Kexin)
PNP Transistors
SMD Type
Transistors
PNP Transistors 2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
(19 views)
L2SA812RLT1G (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr
(19 views)
L2SA812SLT1 (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr
(19 views)
L2SA812SLT3G (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type.
S-L2SA812Q
(19 views)
2SA812 (GME)
Silicon Epitaxial Planar Transistor
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Commplementary to 2SC1623. z High DC current gain:hFE=200typ.
(VCE=-6.0V,IC=
(18 views)
L2SA812QLT1 (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr
(18 views)
L2SA812QLT3G (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type.
S-L2SA812Q
(18 views)
2SA812 (Rectron)
SOT-23 BIPOLAR TRANSISTORS
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
2SA812
FEATURES
* Power dissipation
PCM :
0.2 W(Tamb=25O
(17 views)
L2SA812RLT3G (Leshan Radio Company)
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type.
S-L2SA812Q
(17 views)
2SA812 (WEITRON)
PNP Transistor
PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Vo
(16 views)
