2SC3356W_GalaxySemi Datasheet | Specifications & PDF Download

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC

(26 views)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN s

(23 views)

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor des

(22 views)

www.DataSheet4U.com 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifie

(20 views)

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl

(17 views)

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description This device is designed as a general purpose amplifier and switch. Pac

(16 views)

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

(16 views)

2SC3356W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features 。 Low noise

(15 views)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN s

(15 views)

Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead fre

(14 views)

AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The 2SC3356L is available in SOT-23

(14 views)

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

(13 views)

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga

(13 views)

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

(13 views)

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3  DESCRIPTION The UTC 2SC3356 is an NPN sil

(12 views)

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3  DESCRIPTION The UTC 2SC3356 is designed

(12 views)

www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,

(10 views)