2SD111 Datasheet | Specifications & PDF Download

2SD1113(K) Silicon NPN Triple Diffused www.datasheet4u.com Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1

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Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications · Motor drivers, printer hammer d

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Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications · Motor drivers, printer hammer d

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Complem

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isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot var

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isc Silicon NPN Power Transistor 2SD1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement

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2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450

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2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6 kΩ (Typ) 450

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isc Silicon NPN Power Transistor 2SD1117 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Vo

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1114 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min

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Silicon NPN epitaxial planar type FEATURES z Low collector-emitter saturation voltage VCE(sat). z Satisfactory operation performances at high efficie

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2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 1 23 1. Base 2. Collector (F

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2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 2 1 1. Base 2. Collector

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2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 2 1 1. Base 2. Collector

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

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Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q

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Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fuji

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isc Silicon NPN Power Transistor 2SD1118 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 300V(M

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 50

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