isc Silicon NPN Power Transistor isc Product Spec.
SavantIC
2SD1985 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward curr.
INCHANGE
2SD198 - NPN Transistor
isc Silicon NPN Power Transistor isc Product Specification 2SD198 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Exce.
INCHANGE
2SD1983 - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collecto.
Rohm
D1980 - 2SD1980
Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu.
Rohm
2SD1980 - Power Transistor
Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu.
Panasonic Semiconductor
2SD1985 - Silicon NPN Transistor
Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Feature.
Panasonic Semiconductor
2SD1985A - Silicon NPN Transistor
Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Feature.
SavantIC
2SD198 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High breakd.
INCHANGE
2SD1985 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Satura.
INCHANGE
2SD1988 - NPN Transistor
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1988 DESCRIPTION ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collect.
INCHANGE
2SD1982 - NPN Transistor
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·.
Inchange Semiconductor
2SD1980 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da.
Sanyo Semicon Device
2SD1981 - NPN Transistor
Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications · Motor drivers, printer hammer d.
SavantIC
2SD1985A - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward curr.
Panasonic Semiconductor
D1985 - 2SD1985
Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Featu.
INCHANGE
2SD1985A - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Good Linearity of hFE ·Low Collector Satura.
INCHANGE
2SD1987 - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-.
INCHANGE
2SD1986 - NPN Transistor
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1986 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-E.
