2SD198 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor isc Product Specification 2SD198 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Exce

(12 views)

Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

(10 views)

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·

(10 views)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High breakd

(9 views)

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Featu

(9 views)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Satura

(9 views)

Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications · Motor drivers, printer hammer d

(8 views)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Good Linearity of hFE ·Low Collector Satura

(8 views)

Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

(7 views)

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Feature

(7 views)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward curr

(7 views)

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1988 DESCRIPTION ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collect

(7 views)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collecto

(7 views)

isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da

(6 views)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward curr

(6 views)

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Feature

(4 views)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-

(3 views)

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1986 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-E

(3 views)