2SD198 (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD198
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High breakd
(35 views)
2SD1980 (Rohm)
Power Transistor
Power Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu
(31 views)
2SD1985 (Panasonic Semiconductor)
Silicon NPN Transistor
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1393 and 2SB1393A
s Feature
(30 views)
2SD1985A (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward curr
(30 views)
D1985 (Panasonic Semiconductor)
2SD1985
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
s Featu
(29 views)
2SD1983 (INCHANGE)
NPN Transistor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1983
DESCRIPTION ·High DC Current Gain
: hFE= 4000(Min) @IC= 1A ·Low Collecto
(29 views)
Power Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu
(26 views)
2SD1981 (Sanyo Semicon Device)
NPN Transistor
Ordering number:EN2534
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1981
Driver Applications
Applications
· Motor drivers, printer hammer d
(26 views)
2SD1986 (INCHANGE)
NPN Transistor
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1986
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 2A ·Collector-E
(24 views)
2SD1985 (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High forward curr
(23 views)
2SD198 (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
isc Product Specification
2SD198
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Exce
(22 views)
2SD1985A (Panasonic Semiconductor)
Silicon NPN Transistor
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1393 and 2SB1393A
s Feature
(20 views)
2SD1980 (Inchange Semiconductor)
Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da
(19 views)
2SD1988 (INCHANGE)
NPN Transistor
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1988
DESCRIPTION ·High DC Current Gain-
: hFE = 3000(Min)@ IC= 1A ·Low Collect
(19 views)
2SD1982 (INCHANGE)
NPN Transistor
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1982
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·
(18 views)
2SD1985A (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min.) ·Good Linearity of hFE ·Low Collector Satura
(17 views)
2SD1985 (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Satura
(17 views)
2SD1987 (INCHANGE)
NPN Transistor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1987
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 2A ·Collector-
(15 views)
