isc Silicon NPN Power Transistor INCHANGE Semicon.
2SD201 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD201 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V.2SD2015 - Silicon NPN Transistor
2SD2015 Darlington Equivalent C circuit B (3kΩ) (500Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and.D2012 - 2SD2012
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: .2SD201 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD201 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large curre.2SD2012 - NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: .2SD2012 - NPN Silicon Power Transistor
® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL.2SD2014 - Silicon NPN Transistor
2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Dr.2SD2016 - Silicon NPN Transistor
2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Pur.2SD2012 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem.2SD2014 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING.2SD2015 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2015 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING.2SD2012 - NPN Silicon Power Transistors
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .2SD2014 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt.2SD2015 - NPN Transistor
isc Silicon NPN Darlington Power Transistor 2SD2015 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Satur.2SD2017 - Silicon NPN Transistor
2SD2017 Darlington Equivalent C circuit B (4kΩ) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and M.2SD2018 - Silicon NPN Transistor
Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • H.2SD2019 - Silicon NPN Transistor
2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 15 kΩ (Typ) 0.5 .2SD2017 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2017 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING.D2016 - 2SD2016
www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V.