2SD201 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD201 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large curre

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Dr

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD201 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING

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www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2017 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt

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Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • H

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2SD2015 Darlington Equivalent C circuit B (3kΩ) (500Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and

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isc Silicon NPN Darlington Power Transistor 2SD2017 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Volta

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2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Pur

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2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 15 kΩ (Typ) 0.5

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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isc Silicon NPN Darlington Power Transistor 2SD2015 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Satur

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