SavantIC Semiconductor Product Specification Sil.
INCHANGE
2SD211 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD211 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V.
Inchange Semiconductor
2SD2113 - Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Volt.
Inchange Semiconductor
D2110 - 2SD2110
INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emit.
Leshan Radio Company
L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KWLT1 - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
JCST
2SD2114 - NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR (NPN) FEATURES z High DC current gain. z.
Rohm
2SD2114K - High-current Gain Medium Power Transistor
2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-ba.
Hitachi Semiconductor
2SD2115 - Silicon NPN Epitaxial Planar Transistor
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector.
Hitachi Semiconductor
2SD2115L - Silicon NPN Transistor
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector.
Hitachi Semiconductor
2SD2115S - Silicon NPN Transistor
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector.
Rohm
2SD2118 - Transistor
Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain ch.
SavantIC
2SD211 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD211 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large curre.
Hitachi Semiconductor
D2111 - 2SD2111
www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Em.
Hitachi Semiconductor
2SD2111 - Silicon NPN Transistor
www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Em.
Inchange Semiconductor
2SD2110 - Power Transistor
isc Silicon NPN Darlington Power Transistor 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Satura.
Inchange Semiconductor
2SD2112 - Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.
Leshan Radio Company
L2SD2114KVLT1 - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KWLT1G - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KVLT3G - NPN silicon transistor
Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G.
Rohm
D2118 - 2SD2118
Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain ch.