KDG30N120H2
IGBT
Features
1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms
(71 views)
ASC30N1200MT3 (AST)
1200V N-Channel MOSFET
Description
V X / Mob:15919711751
ASC30N1200MT3
1200V N-Channel MOSFET
Silicon Carbide (SiC) MOSFET use a completely new technology that provide su
(42 views)
IXDT30N120D1 (IXYS)
High Voltage IGBT
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
G
IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1
C G C
VCES =
(37 views)
IPTC030N12NM3 (Infineon)
MOSFET
IPTC030N12NM3
MOSFET
OptiMOSTM3 Power-Transistor, 120 V
Features
• N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x
(37 views)
IXDH30N120 (IXYS)
High Voltage IGBT
IXDH 30N120 IXDH 30N120 D1
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
VCES = 1200 V
IC25
= 60 A
V = CE(sat)
(37 views)
GWA30N120KD (STMicroelectronics)
short circuit rugged IGBT
STGW30N120KD STGWA30N120KD
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features
■ Low on-losses ■ High current capability ■ Low gate
(34 views)
IXYH30N120C3 (IXYS)
High-Speed IGBT
1200V XPTTM GenX3TM IGBTs
High-Speed IGBT for 20-50 kHz Switching
IXYP30N120C3 IXYH30N120C3
VCES = 1200V IC110 = 30A VCE(sat) 3.3V tfi(typ) = 8
(33 views)
NTH4L030N120M3S (ON Semiconductor)
SiC MOSFET
DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L NTH4L030N120M3S
Features
• Typ. RDS(on) = 29 mW @
(32 views)
IXYH30N120B4 (IXYS)
High-Speed Low-Vsat PT IGBT
Advance Technical Information
1200V XPTTM GenX4TM IGBT
IXYH30N120B4
High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching
VCES = 1200V
IC110 =
(32 views)
ASC30N1200MT4 (AST)
1200V N-Channel MOSFET
ASC30N1200MT4
1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performa
(32 views)
NGTB30N120IHRWG (ON Semiconductor)
IGBT
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto
(30 views)
IXFN30N120P (IXYS Corporation)
Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ
(30 views)
IXYP30N120A4 (IXYS)
Ultra Low-Vsat PT IGBT
Advance Technical Information
1200V XPTTM GenX4TM IGBT
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4
Sym
(30 views)
IXYH30N120C4H1 (IXYS)
Gen4 IGBT
IXYH30N120C4H1
1200 V, 30 A XPTTM Gen4 IGBT with Sonic Diode
Extreme Light Punch Through IGBT for 20–50 kHz Switching
IGBT Datasheet
Pinout Diagram
(30 views)
HGTG30N120D2 (Intersil Corporation)
N-Channel IGBT
HGTG30N120D2
April 1995
30A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
• 30A, 12
(29 views)
IXFL30N120P (IXYS Corporation)
Polar HiPerFET Power MOSFET
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ
(29 views)
NGTB30N120IHSWG (ON Semiconductor)
IGBT
NGTB30N120IHSWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi
(29 views)
NGTB30N120FL2WG (ON Semiconductor)
IGBT
NGTB30N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construc
(29 views)
NGTB30N120L2WG (ON Semiconductor)
IGBT
NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct
(29 views)
IXDH30N120D1 (IXYS)
High Voltage IGBT
IXDH 30N120 IXDH 30N120 D1
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
VCES = 1200 V
IC25
= 60 A
V = CE(sat)
(29 views)
