INCHANGE Semiconductor isc N-Channel MOSFET Transi.
TRinno
TGAN30N120FD - Field Stop Trench IGBT
Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati.
ON Semiconductor
NTH4L030N120M3S - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L NTH4L030N120M3S Features • Typ. RDS(on) = 29 mW @.
KEDA
KDG30N120H2 - IGBT
KDG30N120H2 IGBT Features 1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms.
Inchange Semiconductor
30N12 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N12 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag.
IXYS Corporation
IXDR30N120 - High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30.
IXYS Corporation
IXGA30N120B3 - GenX3 1200V IGBTs
GenX3TM 1200V IGBTs High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE(sat) tfi(typ) TO-263 (IXGA.
ON Semiconductor
NGTB30N120IHSWG - IGBT
NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
Infineon
IHW30N120R5 - IGBT
IHW30N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic body diode with low forwa.
ON Semiconductor
NGTB30N120L2WG - IGBT
NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct.
STMicroelectronics
GW30N120KD - short circuit rugged IGBT
STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ Low on-losses ■ High current capability ■ Low gate .
STMicroelectronics
SCT30N120 - Silicon carbide Power MOSFET
SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - production data Features Very tig.
RICOH
RP130N121B-TR-FE - LOW NOISE 150mA LDO REGULATOR
RP130x SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-173-131031 OUTLINE The RP130x Series are CMOS-based positive voltage regulator ICs with high ripp.
IXYS
IXYJ30N120C3D1 - IGBT
Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 .
ON Semiconductor
NGTB30N120IHRWG - IGBT
NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.
IXYS Corporation
IXFN30N120P - Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.
IXYS Corporation
IXGH30N120B3 - GenX3 1200V IGBTs
GenX3TM 1200V IGBTs High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching IXGA30N120B3 IXGP30N120B3 IXGH30N120B3 VCES IC110 VCE(sat) tfi(typ) TO-263 (IXGA.
IXYS Corporation
IXFB30N120P - Polar HiPerFET Power MOSFET
Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ.
ON Semiconductor
NGTB30N120IHLWG - IGBT
NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
ON Semiconductor
NGTB30N120LWG - IGBT
NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provid.
IXYS
IXDT30N120 - High Voltage IGBT
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA G IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 C G C VCES =.