30N12 Datasheet | Specifications & PDF Download

KDG30N120H2 IGBT Features  1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

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Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

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IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat)

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Advance Technical Information 1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4 Sym

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Advance Technical Information 1200V XPTTM GenX4TM IGBT IXYH30N120C4 High-Speed Low-Vsat PT IGBT for up to 20-50kHz Switching VCES = 1200V IC110 =

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WMS30N1200SK N-Channel Silicon MOSFET Rev.02 - 18 June 2024 Product data sheet 1. General description WMS30N1200SK is a high performance super logic

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Advance Technical Information 1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4 Sym

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IXDH 30N120 IXDH 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA VCES = 1200 V IC25 = 60 A V = CE(sat)

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Advance Technical Information 1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4 Sym

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IXYH30N120C4H1 1200 V, 30 A XPTTM Gen4 IGBT with Sonic Diode Extreme Light Punch Through IGBT for 20–50 kHz Switching IGBT Datasheet Pinout Diagram

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Advance Technical Information 1200V XPTTM GenX4TM IGBT IXYH30N120B4 High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching VCES = 1200V IC110 =

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT April 2013 FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technolog

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NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi

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FGH30N120FTD 1200V, 30A Trench IGBT FGH30N120FTD 1200V, 30A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturati

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Sw

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N12 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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IPTC030N12NM3 MOSFET OptiMOSTM3 Power-Transistor, 120 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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