KDG30N120H2 (KEDA) - IGBT
KDG30N120H2
IGBT
Features
1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms
(34 views)
IXYH30N120B4 (IXYS) - High-Speed Low-Vsat PT IGBT
Advance Technical Information
1200V XPTTM GenX4TM IGBT
IXYH30N120B4
High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching
VCES = 1200V
IC110 =
(26 views)
IXDH30N120 (IXYS) - High Voltage IGBT
IXDH 30N120 IXDH 30N120 D1
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
VCES = 1200 V
IC25
= 60 A
V = CE(sat)
(25 views)
IXDT30N120D1 (IXYS) - High Voltage IGBT
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
G
IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1
C G C
VCES =
(24 views)
IXYH30N120C3 (IXYS) - High-Speed IGBT
1200V XPTTM GenX3TM IGBTs
High-Speed IGBT for 20-50 kHz Switching
IXYP30N120C3 IXYH30N120C3
VCES = 1200V IC110 = 30A VCE(sat) 3.3V tfi(typ) = 8
(24 views)
ASC30N1200MT3 (AST) - 1200V N-Channel MOSFET
Description
V X / Mob:15919711751
ASC30N1200MT3
1200V N-Channel MOSFET
Silicon Carbide (SiC) MOSFET use a completely new technology that provide su
(23 views)
NTH4L030N120M3S (ON Semiconductor) - SiC MOSFET
DATA SHEET www.onsemi.com
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L NTH4L030N120M3S
Features
• Typ. RDS(on) = 29 mW @
(22 views)
IXYP30N120A4 (IXYS) - Ultra Low-Vsat PT IGBT
Advance Technical Information
1200V XPTTM GenX4TM IGBT
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4
Sym
(22 views)
IXDH30N120D1 (IXYS) - High Voltage IGBT
IXDH 30N120 IXDH 30N120 D1
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
VCES = 1200 V
IC25
= 60 A
V = CE(sat)
(22 views)
HGTG30N120D2 (Intersil Corporation) - N-Channel IGBT
HGTG30N120D2
April 1995
30A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
• 30A, 12
(21 views)
IXFN30N120P (IXYS Corporation) - Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ
(21 views)
NGTB30N120L2WG (ON Semiconductor) - IGBT
NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct
(21 views)
IPTC030N12NM3 (Infineon) - MOSFET
IPTC030N12NM3
MOSFET
OptiMOSTM3 Power-Transistor, 120 V
Features
• N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x
(21 views)
IXFL30N120P (IXYS Corporation) - Polar HiPerFET Power MOSFET
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ
(20 views)
IXYH30N120C4H1 (IXYS) - Gen4 IGBT
IXYH30N120C4H1
1200 V, 30 A XPTTM Gen4 IGBT with Sonic Diode
Extreme Light Punch Through IGBT for 20–50 kHz Switching
IGBT Datasheet
Pinout Diagram
(20 views)
NGTB30N120IHRWG (ON Semiconductor) - IGBT
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto
(19 views)
NGTB30N120IHSWG (ON Semiconductor) - IGBT
NGTB30N120IHSWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi
(19 views)
NGTB30N120LWG (ON Semiconductor) - IGBT
NGTB30N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provid
(19 views)
GWA30N120KD (STMicroelectronics) - short circuit rugged IGBT
STGW30N120KD STGWA30N120KD
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features
■ Low on-losses ■ High current capability ■ Low gate
(18 views)
NGTB30N120IHLWG (ON Semiconductor) - IGBT
NGTB30N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi
(18 views)
