IS43DR16640DL (ISSI)
64Mx16 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(25 views)
IS46DR16640D (ISSI)
64Mx16 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(25 views)
IS43DR16640D (ISSI)
64Mx16 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(25 views)
HY5DV641622AT (Hynix Semiconductor)
64M(4Mx16) DDR SDRAM
HY5DV641622AT
64M(4Mx16) DDR SDRAM
HY5DV641622AT
This document is a general product description and is subject to change without notice. Hynix Elect
(23 views)
HY27US161G1M (Hynix Semiconductor)
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27US081G1M HY27US161G1M
This document is a general pr
(22 views)
HY27UF081G2A (Hynix Semiconductor)
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27UF081G2A HY27UF161G2A
This document is a general product descri
(20 views)
HY27UF081G2M (Hynix Semiconductor)
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com )
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document
(19 views)
CMS6416LAx-75xx (FIDELIX)
64M(4Mx16) Low Power SDRAM
CMS6416LAx-75xx
www.DataSheet4U.com
64M(4Mx16) Low Power SDRAM
Revision 1.3 November, 2005
Rev1.3, Nov. 2005
CMS6416LAx-75xx
Document Title
www.D
(19 views)
IS46DR16640DL (ISSI)
64Mx16 DDR2 DRAM
IS43/46DR81280D, IS43/46DR81280DL IS43/46DR16640D, IS43/46DR16640DL
128Mx8, 64Mx16 DDR2 DRAM
FEATURES
• Standard Voltage: Vdd and Vddq = 1.8V ±0.1V •
(18 views)
KM23C64000T (Samsung semiconductor)
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
KM23C64000T
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access ti
(17 views)
H55S1G62MFP-75 (Hynix Semiconductor)
1Gb (64Mx16bit) Mobile SDRAM
www.DataSheet4U.com
1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O
Specification of 1Gb (64Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized
(17 views)
K4X1G163PE-FGC8 (Samsung)
64Mx16 Mobile DDR SDRAM
K4X1G163PE - FGC6(8)
Mobile DDR SDRAM
64Mx16 Mobile DDR SDRAM
(VDD/VDDQ 1.8V/1.8V)
-1-
Revision 1.1 February 2009
Free Datasheet http://www.0PDF.
(17 views)
HY27UF161G2M (Hynix Semiconductor)
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
( DataSheet : www.DataSheet4U.com )
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Document
(16 views)
K1S6416BCC (Samsung semiconductor)
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
www.DataSheet4U.com
K1S6416BCC
Document Title
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0
(16 views)
K3P7U1000B-YC (Samsung semiconductor)
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
K3P7V(U)1000B-YC
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast acce
(16 views)
K4X1G163PE-FGC6 (Samsung)
64Mx16 Mobile DDR SDRAM
K4X1G163PE - FGC6(8)
Mobile DDR SDRAM
64Mx16 Mobile DDR SDRAM
(VDD/VDDQ 1.8V/1.8V)
-1-
Revision 1.1 February 2009
Free Datasheet http://www.0PDF.
(16 views)
H55S1G62MFP-60 (Hynix Semiconductor)
1Gb (64Mx16bit) Mobile SDRAM
www.DataSheet4U.com
1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O
Specification of 1Gb (64Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized
(15 views)
EMC646SP16J (EMLSI)
4Mx16 bit CellularRAM
Preliminary
EMC646SP16J
4Mx16 CellularRAM
Document Title
4Mx16 bit CellularRAM
Revision History
www.DataSheet4U.com Revision No.
0.0
History
Init
(14 views)
EMC646SP16K (EMLSI)
4Mx16 bit CellularRAM
Preliminary
EMC646SP16K
4Mx16 CellularRAM AD-MUX
Document Title
4Mx16 bit CellularRAM AD-MUX
Revision History
www.DataSheet4U.com Revision No.
Hi
(14 views)
IS41LV16400 (Integrated Silicon Solution)
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16400
4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and out
(14 views)
