UNISONIC TECHNOLOGIES CO., LTD 4N65-E 4A, 650V N-C.
Inchange Semiconductor
4N65 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot.
PINGWEI
4N65F - N-Channel MOSFET
4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE 4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% ava.
IPS
FTA04N65 - N-Channel MOSFET
FTP04N65 FTA04N65 N-Channel MOSFET Applications: • Adaptor • Charger • SMPS Standby Power • LCD Panel Power Features: • Lead Free • Low ON Resistan.
PINGWEI
4N65 - N-Channel MOSFET
4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE 4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% ava.
Oucan Semi
FQPF4N65 - 4A N-Channel MOSFET
FQP4N65/FQPF4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high vo.
Global Semiconductor
MCIRF4N65 - POWER MOSFET
MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Characteristics Characteristics Values Units IDS .
CET
CEF04N65 - N-Channel MOSFET
CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RD.
Silan
SVD4N65F - (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET
SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is.
SL
SVF4N65F - N-channel MOSFET
SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transi.
IPS
ITA04N65R - N-Channel MOSFET
ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ● .
IPS
ITD04N65R - N-Channel MOSFET
ITD04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ● .
MagnaChip
MDF4N65B - N-Channel MOSFET
MDF4N65B N-channel MOSFET 650V MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2Ω General Description These N-channel MOSFET are produced using advanced Mag.
ark
FTD04N65C - 650V N-Channel MOSFET
FTU04N65C/FTD04N65C Doc. NO: QRD-310 650V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge Fast Switching 100% Avalanche T.
JILIN SINO-MICROELECTRONICS
JCS4N65F - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N65F MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson（Vgs=10V） 2.8Ω Qg 27nC LED APPLICATIONS High effi.
JILIN SINO-MICROELECTRONICS
JCS4N65R - N-CHANNEL MOSFET
R JCS4N65C MAIN CHARACTERISTICS ID VDSS Rdson_ Typ （ Vgs=1 0V） Max Qg-typ 4.0 A 650 V 2.1Ω 2.6Ω 14nC Package JCS4N65C LED AP.
JINGJIAZHEN
HF4N65 - 650V N-Channel MOSFET
HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate.
SamHop Microelectronics
SDD04N65 - N-Channel MOSFET
Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDS.
JINAN JINGHENG
4N65 - 650V N Channel Power MOSFET
R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoH.
PINGWEI
4N65B - N-Channel MOSFET
4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE 4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% ava.
Potens semiconductor
PMD04N65M - N-Channel MOSFETs
650V N-Channel MOSFETs PMD04N65M General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog.
