4N65-Q Datasheet | Specifications & PDF Download

CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RD

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP34N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested

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X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/d

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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isc N-Channel MOSFET Transistor IXFP34N65X2M ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V ·Fast Switching Speed ·100% avalanche teste

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ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ●

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minim

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-

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X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP34N65X2M D G S VDSS = ID25 =  RDS(on) 650V 34A 100m

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Silicon N-Channel Power MOSFET CS4N65F A9R-G ○R General Description： CS4N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTH64N65X VDSS = ID25 = RDS(on) 650V 64A 51m Symbol VDSS VDG

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X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP34N65X2 IXTH34N65X2 VDSS = ID25 =  RDS(on) 650V 34A 96m TO-220 (IXTP) Symb

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CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense c

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CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense c

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RD

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X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA34N65X2 IXFP34N65X2 IXFH34N65X2 Symbol VDSS VDG

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ADVANCE INFORMATIO DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 650V RDS(ON) 3.0Ω@VGS = 10V Package TO220-3 ID TC = 25°C

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