4N65-Q Datasheet | Specifications & PDF Download

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoH

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N R N-CHANNEL MOSFET JCS4N65F MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson（Vgs=10V） 2.8Ω Qg 27nC   LED APPLICATIONS  High effi

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FQP4N65/FQPF4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high vo

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ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ●

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UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better

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HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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R ShenZhen Jingdao Electronic Co.,Ltd. 650V N-Channel VDMOS RoHS POWER MOSFET l l TO-251/252 TO-251 TO-252 Tamb= 25 - (Ta=25 ) Tamb= 25 VDSS 65

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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better

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R JCS4N65C MAIN CHARACTERISTICS ID VDSS Rdson_ Typ （ Vgs=1 0V） Max Qg-typ 4.0 A 650 V 2.1Ω 2.6Ω 14nC Package JCS4N65C    LED AP

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AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl

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4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava

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SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transi

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SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transi

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UNISONIC TECHNOLOGIES CO., LTD 4N65-C 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have bet

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