4N65-R Datasheet | Specifications & PDF Download

SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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UNISONIC TECHNOLOGIES CO., LTD 14N65-TC 14A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N65-TC are N-Channel enhancement mode power field ef

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ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ●

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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UNISONIC TECHNOLOGIES CO., LTD 14N65-TC 14A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N65-TC are N-Channel enhancement mode power field

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Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP24N65X2M VDSS = ID25 = RDS(on) 650V 8.5A 145m N-Channel Enh

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MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65 ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω Major Ratings and Characteristics Characteristics Values Units IDS

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WML14N65C2, WMK14N65C2, WMM14N65C2 WMN14N65C2, WMP14N65C2, WMO14N65C2 650V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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WML14N65C2, WMK14N65C2, WMM14N65C2 WMN14N65C2, WMP14N65C2, WMO14N65C2 650V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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FQP4N65/FQPF4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high vo

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UNISONIC TECHNOLOGIES CO., LTD 24N65-CB 24A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 24N65-CB is a high voltage power MOSFET and is designed

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X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP34N65X2M D G S VDSS = ID25 =  RDS(on) 650V 34A 100m

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 96mΩ@VGS= 10V ·Fast

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UNISONIC TECHNOLOGIES CO., LTD 4N65-ML 4.0A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-ML is a high voltage power MOSFET combines advance

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Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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SLP4N65UZ / SLF4N65UZ SLP4N65UZ / SLF4N65UZ 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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4A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.5Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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