.
Silan
40N60NPFD - 600V FIELD STOP IGBT
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
Silan Microelectronics
SVS5N70D - 700V DP MOS POWER TRANSISTOR
SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MO.
ETC
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
JoulWatt
JW1795 - Integrated 500V MOS non-isolated buck LED driver
Parameters Subject to Change Without Notice JW1795 500V MOS LED JW1795 500V MOS，、 LED 。 ，， ，。 JW1795 ，， 。 JW1795， 0.1S，LED。 ， ，，LED， LED。 Com.
Fairchild Semiconductor
2N60B - 600V N-Channel MOSFET
www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mod.
Silan Microelectronics
60N60FD1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
ROUM
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
Maple Semiconductor
4N60C - 600V N-Channel MOSFET
SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri.
Fairchild Semiconductor
5N60C - 600V N-Channel MOSFET
www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow.
UTC
20N60 - 600V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using .
Fairchild Semiconductor
FDA59N30 - 300V N-Channel MOSFET
FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 .
ROUM
MUR6030NCA - 60A 300V Fast recovery diode
60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv.
Fairchild Semiconductor
FQP2N60C - 600V N-Channel MOSFET
FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe.
Silan Microelectronics
SFR16S20T - 200V SUPER-FAST RECOVERY RECTIFIER
SFR16S20T/F_Datasheet 16A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR16S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s.
Fairchild Semiconductor
13N50C - 500V N-Channel MOSFET
www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi.
JINAN JINGHENG
2N60 - 600V N-Channel Power MOSFET
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with .
GFD
4N60F - 600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been .
SILAN MICROELECTRONICS
SVF4N60F - 600V N-CHANNEL MOSFET
SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field.
SPMICRO
JW1792 - Integrated 500V MOS Non-isolated Buck LED Driver
JW1792 Parameters Subject to Change Without Notice Integrated 500V MOS Non-isolated Buck LED Driver DESCRIPTION JW1792 is a non-isolated, constant .
