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PT5618 200V Three-Phase Gate Driver DESCRIPTION The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side refe

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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CMH20N50 500V N-Channel MOSFET General Description Product Summery These N-Channel enhancement mode power field effect transistors are produced us

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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Parameters Subject to Change Without Notice JW1795 500V MOS LED JW1795 500V MOS，、 LED 。 ，， ，。 JW1795 ，， 。 JW1795， 0.1S，LED。 ， ，，LED， LED。 Com

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IA/IE-1W～2W Series Features u Operating temperature: -40 to +85℃ u ±5/±9/±12/±15Vdc multiple voltage output u International standard pin-out u 100% b

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Silan Microelectronics SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enhancement mode power MOS

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NCE0103-VB NCE0103-VB Datasheet N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.100 at VGS = 10 V 4.3 100 0

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Silan Microelectronics SVF3878P7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878P7 is an N-channel enhancement mode power MOS field effect

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PST Technical Data : SD-014 Page 1 of 2 ZH2600A/8000V– Standard Recovery Rectifier 8000 VRRM; 2600A avg *****************************************

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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FQB12N20L / FQI12N20L February 2001 FQB12N20L / FQI12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fie

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