512K-BIT Datasheet | Specifications & PDF Download

512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5

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M29F040B 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OP

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NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM February 1999 NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General De

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January 20072007 February AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM 512K X 8 BIT LOW POWER CMOS SRAM FEATURES Access time : 55 ns Low power consumpt

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V

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Pm25LQ512B Pm25LQ010B Pm25LQ020B Pm25LQ040B 512K/1M/2M/4MBIT 3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI DATA SHEET 512K/1M/2M/4MBIT 3V QUAD SERIA

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PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5

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CY7C1062DV33 16 Mbit (512 K × 32) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low complementary metal

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HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous

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AT27C040 Features • Fast Read Access Time - 70 ns • Low Power CMOS Operation • 100 µA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages

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M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURES

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