5N120 Datasheet | Specifications & PDF Download

Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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Circuit Maximum Ratings Parameter Collector-Emitter Breakdown Voltage DC Collector Current, limited by Tjmax TC= 25°C TC= 100°C Diode Forward Current,

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HM15N120AT IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off w

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

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KDG25N120H1 IGBT Features  1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

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HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ)

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Advanced Technical Information IXRA 15N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat) typ. = 2.5 V 2 TO-263AB

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem

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Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty

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Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

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SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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