5N120 Datasheet | Specifications & PDF Download

Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching

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Advanced Technical Information IXRA 15N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat) typ. = 2.5 V 2 TO-263AB

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High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Sym

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General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES

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Advanced Technical Information IXRP 15N120 IXRA 15N120 www.DataSheet4U.com IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat

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Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty

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Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B S Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30

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HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ)

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IGBT IXSH 35N120B IXST 35N120B S Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 I

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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SEMICONDUCTOR TECHNICAL DATA KGH25N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a

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  IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tS

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IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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