UNISONIC TECHNOLOGIES CO., LTD 5N120 5A, 1200V N-C.
Fairchild Semiconductor
FGA25N120ANTDTU - IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co.
KEC
15N120NDA - KGH15N120NDA
SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a.
IXYS Corporation
15N120A - IXSH15N120A
Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe.
ON Semiconductor
NGTB15N120IHLWG - IGBT
NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
Infineon Technologies
H20R120 - IHW15N120R
Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for.
KEDA
KDG15N120H - IGBT
IGBT Features 1200V,15A VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms S.
JILIN SINO
TT025N120EQ - N-CHANNEL IGBT
N N-CHANNEL IGBT R TT025N120EQ MAIN CHARACTERISTICS IC 25 A VCES 1200V Vcesat-ty（p Vge=15V） 1.9V Package UPS Trench FS , , VCE.
Intersil Corporation
HGTG5N120BND - N-Channel IGBT
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyper.
IXYS Corporation
IXSH35N120B - IGBT
IGBT IXSH 35N120B IXST 35N120B S Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 I.
Fairchild Semiconductor
FGA15N120ANTD - 1200V NPT Trench IGBT
www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem.
IXYS Corporation
IXGX35N120CD1 - HiPerFAST IGBT
www.DataSheet4U.com Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 (D1) VCES = 1200 V IC25 = 70 A.
Fairchild Semiconductor
FGA25N120AN - IGBT
www.DataSheet4U.com FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conductio.
Fairchild Semiconductor
FGA25N120ANTD - NPT Trench IGBT
FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem.
IXYS Corporation
T45N1200 - IXGT45N1200
www.DataSheet4U.com IGBT High Voltage, Low VCE(sat) Preliminary data sheet IXGH 45N120 VCES IXGT 45N120 IC25 VCE(sat) tfi(typ) = 1200 V = 75 A = 2..
IXYS Corporation
IXSA15N120B - High Voltage IGBT
Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B S Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30 .
IXYS Corporation
IXSN55N120A - High Voltage IGBT
High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE(sat) = 3 Short Circuit SOA Capability 2 Preliminary Data www.DataSheet4U.com 4 .
Infineon
IHW15N120R2 - Reverse Conducting IGBT
IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward.
IXYS Corporation
IXER35N120D1 - NPT3 IGBT with Diode
Advanced Technical Information www.DataSheet4U.com NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ. C G = 50 A = 1200 V .
ON Semiconductor
NGTB25N120FLWG - IGBT
NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perf.
KEC
KGH15N120NDA - NPT IGBTs
SEMICONDUCTOR TECHNICAL DATA KGH15N120NDA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such a.