60N60 Datasheet | Specifications & PDF Download

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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IGW60N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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FGH60N60SMD — 600 V, 60 A Field Stop IGBT November 2013 FGH60N60SMD 600 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature: TJ = 175oC

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MOSFET – N-Channel, SUPERFET) II 600 V, 15 A, 260 mW FCPF260N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage supe

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SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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ITO-220 TO-252 (DPAK) TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Perfo

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FGH60N60UFD — 600V, 60A Field Stop IGBT FGH60N60UFD 600V, 60A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =

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GenX3TM 600V IGBT High Speed PT IGBT for 40-100kHz Switching IXGH60N60C3 VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbo

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ C

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GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol VCES VCGR VGES VG

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MOSFET – N-Channel, SUPERFET) II 600 V, 15 A, 260 mW FCPF260N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage supe

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FCP260N60E / FCPF260N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP260N60E / FCPF260N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 15 A, 26

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