Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V .
Silan Microelectronics
60N60FD1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
IPS
IGW60N60F - MOSFET
IGW60N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa.
IXYS Corporation
60N60 - IGBT
Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM.
Advanced Power Technology
APT60N60SCS - Super Junction MOSFET
www.DataSheet4U.com 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMO.
ON Semiconductor
FCPF260N60E-F154 - N-Channel MOSFET
MOSFET – N-Channel, SUPERFET) II 600 V, 15 A, 260 mW FCPF260N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage supe.
Silan Microelectronics
60N60D1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
Fairchild Semiconductor
160N60UFD - Ultrafast IGBT
SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low.
Fairchild Semiconductor
FCP260N60E - MOSFET
FCP260N60E / FCPF260N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP260N60E / FCPF260N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 15 A, 26.
IXYS
60N60C2 - IGBT
Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35.
TRinno
TGAN60N60FD - Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
IXYS Corporation
IXGH60N60B2 - IGBT
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B.
IXYS Corporation
IXGR60N60U1 - LowV-CE(sat) IGBT
www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back.
Advanced Power Technology
APT60N60BCSG - Super Junction MOSFET
www.DataSheet4U.com 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMO.
Advanced Power Technology
APT60N60BCS - Super Junction MOSFET
www.DataSheet4U.com 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMO.
SSDI
SSG60N60 - 85 AMP 600 VOLTS FAST POWER IGBT
SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-powe.
IXYS Corporation
IXGK60N60 - Ultra-Low VCE(sat) IGBT
Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I.
IXYS Corporation
IXGH60N60 - Ultra-Low VCE(sat) IGBT
Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I.
IXYS
IXGR60N60B2 - HiPerFAST IGBT
Advance Technical Data www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM B2-Class High Speed IGBTs IXGR 60N60B2 IXGR 60N60B2D1 (Electrically Isola.
Icemos
ICE60N600D - N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet ICE60N600D ICE60N600D N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
Fairchild Semiconductor
FGA60N60UFD - 60A Field Stop IGBT
FGA60N60UFD — 600 V, 60 A Field Stop IGBT November 2013 FGA60N60UFD 600 V, 60 A Field Stop IGBT Features • High Current Capability • Low Saturation .