60N60 Datasheet | Specifications & PDF Download

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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IGW60N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati

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FGH60N60SMD — 600 V, 60 A Field Stop IGBT November 2013 FGH60N60SMD 600 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature: TJ = 175oC

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Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I

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GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol VCES VCGR VGES VG

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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MS60N60HGB3/C1 Features  VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V  100% avalanche tested  Minimum Lot-to-Lot variations for robust device  perform

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GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ C

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www.DataSheet.co.kr FGH60N60SFD 600V, 60A Field Stop IGBT August 2008 FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Lo

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MS60N60HGB3/C1 Features  VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V  100% avalanche tested  Minimum Lot-to-Lot variations for robust device  perform

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www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM Lightspeed 2TM Series IXGR 60N60C2 IXGR 60N60C2D1 (Electrically Isolated Back Surface) Preliminar

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HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM

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Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I

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GenX3TM 600V IGBT High Speed PT IGBT for 40-100kHz Switching IXGH60N60C3 VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbo

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