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TPC5160 16bit SAR ADC with full differential input Features  16bit SAR ADC without zero latency − Throughput speed: 600 KSPS  Unipolar, differentia

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HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous

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HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product descri

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K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr

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Machine Translated by Google Features DP5020 CMOS 16BIT LED DRIVER CIRCUIT DP5020 is a driver IC designed for LED display panels. It has a built-in

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K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr

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tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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www.DataSheet4U.com 1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O Specification of 1Gb (64Mx16bit) Mobile SDRAM Memory Cell Array - Organized

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K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576

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www.DataSheet4U.com HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision H

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tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte

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M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM FEAT

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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IC41C16100S IC41LV16100S Document Title 1M x 16 bits Dynamic RAM with EDO Page Mode Revision History Revision No 0A 0B 0C 0D History Initial Draft R

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ESMT SDRAM M12L16161A (2R) 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION  JEDEC standard 3.3V power supply The M12L16161A

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Memory ICs BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W 64×16bits serial EEPROM BR93LC46-W / BR93LC46F-W /

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KM416C256D, KM416V256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 262,144 x 16 bit Fast Page Mode C

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K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS c

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TB62706BN/BF TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62706BN,TB62706BF 16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS The T

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