6N70-P Datasheet | Specifications & PDF Download

PFU6N70EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch

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Sep 2012 PFP6N70E / PFF6N70E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 6.0 A 700 V 1.6 Ω 31 nC APPLICA

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PFU6N70EGS-H 123 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable

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PFP6N70F / PFF6N70F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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UNISONIC TECHNOLOGIES CO., LTD 6N70 6.0A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N70 is an N-channel mode power MOSFET using UTC’s advance

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MSF6N70 700V N-Channel MOSFET GENERAL DESCRIPTION The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combinatio

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N-Channel Power MOSFET FEATURES  RDS(ON)=1.6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically 45pF)  High switching speed.

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MJIRF6N70 ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω Major Ratings and Characteristics Characteristics Values Units ID 6.0 A IDM 24 A VDS 700 V VGS

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BRF6N70 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ，，，。 Fast switching

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Sep 2012 PFP6N70E / PFF6N70E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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PFP6N70F / PFF6N70F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage-

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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Silicon N-Channel Power MOSFET ○R CS6N70 A4R-G General Description： CS6N70 A4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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Silicon N-Channel Power MOSFET CS6N70 A3D1-G ○R General Description： CS6N70 A3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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