70-190 Datasheet | Specifications & PDF Download

SHEN ZHEN ELITE CHIP MICROCIRCUIT CO.,LTD EC190708- 09F6-19E7 3 ． ：DC 2.4-5.0V K1， OUT ，，。 3 ，。 3 ，OUT 。 . （VDD=5.0V TA=25℃）

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DPAK GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package 13 March 2025 Product data sheet 1. General description The GANE190

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel. +85 2 2111 8088, Fax +85 2 2111 8087

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3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 IDT72V70190 FEATURES: • 256 x 256 channel non-blocking switching at 2.048 Mb/s • Per-channel

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Cree® UltraThin® UT190™ Gen 3 LEDs CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness) Cree’s UT190 LEDs combine highly efficient InGaN materials wit

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TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190C Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-junction Power MOSFET Description 700V Super-junction P

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BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting (SMD) 2 1 VPS

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INN700D190B 700V GaN Enhancement-mode Power Transistor INN700D190B 1. General description 700V GaN-on-Silicon Enhancement-mode Power Transistor in D

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NPN Silicon AF Transistors BCX 54 … BCX 56 Features For AF driver and output stages q High collector current q Low collector-emitter saturation volt

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SB170S thru SB1B0S 1.0 Amp. Schottky Barrier Rectifiers Voltage Range 70 to 100 Volts Forward Current 1.0 Ampere Features ‹ ‹ ‹ ‹ ‹ ‹ Metal-Semicondu

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w w w .D a t a Sh t e e 4U . mAgilent HSMM/MN-C110, o c Data Sheet C170, C190, C191, and C150 SMT ChipLEDs Description These small chip-typ

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www.DataSheet4U.com VCO Product Specification Model: VCO190-2670T Rev: A Date: 4/21/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature R

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TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190C Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-junction Power MOSFET Description 700V Super-junction P

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TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190C Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-junction Power MOSFET Description 700V Super-junction P

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3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 IDT72V70190 FEATURES: • 256 x 256 channel non-blocking switching at 2.048 Mb/s • Per-channel

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VSF190N70HS2 700V/20A N-Channel Advanced Power MOSFET Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10V  Super Junction Technology 

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TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190C Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-junction Power MOSFET Description 700V Super-junction P

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DS52-0005 Low Cost Two-Way SMT Power Divider 1700 - 1900 MHz Features • • • • • • • Small Size and Low Profile Industry Standard SOIC-8 SMT Plastic P

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e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor in

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