8N50F Datasheet | Specifications & PDF Download

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

Rating: 1 ★ (9 votes)

FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low

Rating: 1 ★ (8 votes)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

Rating: 1 ★ (6 votes)

FQA28N50F September 2001 FRFET FQA28N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors a

Rating: 1 ★ (4 votes)

Silicon N-Channel Power MOSFET CS8N50F A9R ○R General Description： CS8N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

Rating: 1 ★ (4 votes)

SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect t

Rating: 1 ★ (3 votes)

8N50F N-Channel Enhancement Mode Power MOSFET Description The 8N50F uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Rating: 1 ★ (3 votes)

AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

Rating: 1 ★ (3 votes)

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

Rating: 1 ★ (2 votes)

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

Rating: 1 ★ (2 votes)

FDA28N50F — N-Channel UniFETTM FRFET® MOSFET FDA28N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 28 A, 175 mΩ May 2014 Features • RDS(on) = 140 mΩ (T

Rating: 1 ★ (2 votes)

SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect t

Rating: 1 ★ (2 votes)

Silicon N-Channel Power MOSFET CR18N50F A9K General Description： CR18N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

Rating: 1 ★ (2 votes)

NCE08N50D,NCE08N50,NCE08N50F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

Rating: 1 ★ (1 votes)

Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Features and Benefits TO- 220F  Advanced Process Technology  Special desi

Rating: 1 ★ (1 votes)