8N50F Datasheet | Specifications & PDF Download

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low

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SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect t

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Silicon N-Channel Power MOSFET CS8N50F A9R ○R General Description： CS8N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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FQA28N50F September 2001 FRFET FQA28N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors a

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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8N50F N-Channel Enhancement Mode Power MOSFET Description The 8N50F uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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NCE08N50D,NCE08N50,NCE08N50F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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Silicon N-Channel Power MOSFET CR18N50F A9K General Description： CR18N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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HM18N50A / HM18N50F 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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FDA28N50F — N-Channel UniFETTM FRFET® MOSFET FDA28N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 28 A, 175 mΩ May 2014 Features • RDS(on) = 140 mΩ (T

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Features and Benefits TO- 220F  Advanced Process Technology  Special desi

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SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect t

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