8N90 Datasheet | Specifications & PDF Download

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID

(3 views)

UNISONIC TECHNOLOGIES CO., LTD 8N90-FC 8.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N90-FC provide excellent RDS(ON), low gate charge and

(3 views)

Silicon N-Channel Power MOSFET ○R CS8N90F A9D General Description： CS8N90F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

(3 views)

900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns Sy

(2 views)

Silicon N-Channel Power MOSFET CS8N90F A9HD ○R General Description： CS8N90F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

(2 views)

Silicon N-Channel Power MOSFET CS8N90F A9 ○R General Description： CS8N90F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

(2 views)

Silicon N-Channel Power MOSFET CS8N90 A8 ○R General Description： CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

(2 views)

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I

(2 views)

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I

(2 views)

FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

(2 views)

HiPerFASTTM IGBT Preliminary data sheet IXGH 28N90B VCES IXGT 28N90B IC25 VCE(SAT) tfi(typ) = 900 V = 51 A = 2.7 V = 130 ns www.DataSheet4U.com Sy

(2 views)

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID

(2 views)

UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N90 is an N-channel mod

(2 views)

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot

(2 views)

SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW8N

(1 views)

FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

(1 views)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N90 ·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Volta

(1 views)

900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns Sy

(1 views)

(1 views)

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c

(1 views)