8N90 Datasheet | Specifications & PDF Download

SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW8N

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FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N90 is an N-channel mod

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STW8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N90 ·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Volta

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UNISONIC TECHNOLOGIES CO., LTD 8N90-FC 8.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N90-FC provide excellent RDS(ON), low gate charge and

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900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I

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Silicon N-Channel Power MOSFET ○R CS8N90F A9D General Description： CS8N90F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns Sy

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Silicon N-Channel Power MOSFET CS8N90F A9HD ○R General Description： CS8N90F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR18N90P VDSS I

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Advanced Power MOSFET SSH8N90A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extend

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STW8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal

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STP8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1: Int

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FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET www.onsemi.com FQP8N90C / FQPF8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description This N-Cha

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900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns Sy

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