INCHANGE Semiconductor isc N-Channel MOSFET Transi.
Inchange Semiconductor
8N90 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N90 ·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Volta.
Samsung Electronics
SSF8N90A - Advanced Power MOSFET
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IXYS Corporation
IXFV18N90P - Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID.
Fairchild Semiconductor
FQA8N90C_F109 - N-Channel QFET MOSFET
FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features • 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 1.
STMicroelectronics
STF8N90K5 - N-channel Power MOSFET
STF8N90K5 N-channel 900 V, 0.60 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal sc.
INCHANGE
8N90A - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot .
SEMIPOWER
SW8N90 - N-channel TO-220F MOSFET
SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW8N.
Fairchild Semiconductor
FQA8N90C - 900V N-Channel MOSFET
FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F.
IXYS
IXYP8N90C3 - IGBT
900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat) 3.0V tfi(typ) = 130ns Sy.
IXYS
IXYY8N90C3 - IGBT
900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat) 3.0V tfi(typ) = 130ns Sy.
Huajing Microelectronics
CS8N90FA9HD - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS8N90F A9HD ○R General Description： CS8N90F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel.
Huajing Microelectronics
CS8N90FA9 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS8N90F A9 ○R General Description： CS8N90F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
Huajing Microelectronics
CS8N90A8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS8N90 A8 ○R General Description： CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.
IXYS
IXYP8N90C3D1 - IGBT
900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I.
IXYS
IXYA8N90C3D1 - IGBT
900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I.
Fairchild Semiconductor
FQP8N90C - 900V N-Channel MOSFET
FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .
Fairchild Semiconductor
FQPF8N90C - 900V N-Channel MOSFET
FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .
IXYS Corporation
IXGH28N90B - HIPERFAST IGBT
HiPerFASTTM IGBT Preliminary data sheet IXGH 28N90B VCES IXGT 28N90B IC25 VCE(SAT) tfi(typ) = 900 V = 51 A = 2.7 V = 130 ns www.DataSheet4U.com Sy.
IXYS Corporation
IXGT28N90B - HIPERFAST IGBT
HiPerFASTTM IGBT Preliminary data sheet IXGH 28N90B VCES IXGT 28N90B IC25 VCE(SAT) tfi(typ) = 900 V = 51 A = 2.7 V = 130 ns www.DataSheet4U.com Sy.
