9435A Datasheet | Specifications & PDF Download

SDM9435A-VB SDM9435A-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = - 10 V - 30 0.

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SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic

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ME9435A 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435A is the P-Channel logic enhancement mode power field effect transistors,

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NP9435ASR-S 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP9435ASR-S uses advanced trench technology and design to provi

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BM9435A www.DataSheet4U.com 5A PMOS P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-5.3A , RDS(ON)=65mΩ(typ.) @ VGS=-10V RDS(O

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NDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Se

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May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 P-Channel enhancement mode power field effect tra

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Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT9435A FEATURES ● Super high dense cell design for low RDS(ON)

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http://www.ncepower.com Pb Free Product NCE9435A NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE9435A uses advanced trench technolo

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HM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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WPM9435A Single P-Channel, -30V, -6.3A, Power MOSFET WPM9435A Http://www.sh-willsemi.com VDS (V) -30 Typical RDS(on) (mΩ) 33 @ VGS=-10V 43 @ VGS=-4

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PE9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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JMTP9435A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS= -30V, ID= -5.1A RDS(ON) <55mΩ @ VGS = -10V RDS(ON) <90mΩ @ VGS =

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CET9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dens

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Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9435A uses advanced trench technology to provide excellent RDS(ON

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CEM9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. Super high

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( DataSheet : www.DataSheet4U.com ) S DM9435A S amHop Microelectronics C orp. May ,2004 ver 1.1 P -C hannel E nhancement Mode Field E ffect Transis

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SPP9435A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9435A is the P-Channel logic enhancement mode power field effect transistors are produce

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FDS9435A FDS9435A 30V P-Channel PowerTrench®® MOSFET Features General Description • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ

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P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced u

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