COMMON-DRAIN Datasheet | Specifications & PDF Download

9926A Common Drain N-Channel Enhancement Mode MOSFET z Features VDS VGS RDSon TYP ID 21mR@4V5 z Applications ¾ Li-ion battery protection ; ¾ Loa

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SMC3320W Common-Drain Dual N-Channel MOSFET ■DESCRIPTION SMC3320 is the Dual N-Channel enhancement mode power field effect transistors are using tre

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AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench t

Rating: 1 ★ (7 votes)

FDW9926NZ March 2004 FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is

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www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench t

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L

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AOCA33103E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configurati

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FDW2515NZ February 2003 FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET

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FDZ2554P July 2003 FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description Combining Fairchild’s adv

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AOCR36330 30V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • Common drain configuration for

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AOC3870 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve ba

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AOCA32317 30V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • ESD protection • Common drain c

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AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2802 uses advanced trench t

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CYStech Electronics Corp. Spec. No. : C779V8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MO

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FDW2515NZ February 2003 FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET

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MDC0531E – Common-Drain N-channel Trench MOSFET 30V MDC0531E Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description The MDC0531E u

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www.DataSheet4U.com GF6968A Common-Drain Dual N-Channel MOSFET H C EN ET R T ENF G TSSOP-8 0.122 (3.10) 0.114 (2.90) 8 5 0.177 (4.50) 0.170 (4.30)

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AO8810 20V Common-Drain Dual N-Channel MOSFET General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate c

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AO8814 20V Common-Drain Dual N-Channel MOSFET General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate c

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www.DataSheet4U.com AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8832 uses advanced trench t

Rating: 1 ★ (4 votes)