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AO8846 Datasheet - Alpha & Omega Semiconductors

AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8846 is Pb-free (meets ROHS & Sony 259 s.

AO8846 Features

* VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8KΩ D1 D2 G2 1.8KΩ S1 S2 Absolute Maximum Ratings T

AO8846_AlphaOmegaSemiconductors.pdf

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Datasheet Details

Part number:

AO8846

Manufacturer:

Alpha & Omega Semiconductors

File Size:

259.20 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

AO8846 Distributor

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TAGS

AO8846 AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors