CS60 Datasheet | Specifications & PDF Download

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application

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Thyristor Single Thyristor Part number CS60-16io1R CS60-16io1R VRRM = 1600 V I TAV = 60 A VT = 1.14 V 2 1 3 Backside: isolated Features / A

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Silicon N-Channel Power MOSFET ○R CS60N20 ANR General Description： CS60N20 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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N-Channel Trench Power MOSFET General Description The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applicatio

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LOW PHASE NOISE CLOCK MULTIPLIER DATASHEET ICS601-01 Description The ICS601-01 is a low-cost, low phase noise, high-performance clock synthesizer fo

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LOW PHASE NOISE CLOCK MULTIPLIER DATASHEET ICS601-02 Description The ICS601-02 is a low cost, low phase noise, high performance clock synthesizer fo

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HCS60R150T Super Junction MOSFET Jan 2016 HCS60R150T 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low sw

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HCS60R115S Dec 2019 HCS60R115S 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS60R190S June 2019 HCS60R190S 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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Silicon N-Channel Power MOSFET ○R CS60N20 AKR General Description： CS60N20 AKR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Silicon N-Channel Power MOSFET CS60N06 C4 ○R General Description： CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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On-board type Ordering information SUCS1R5 R SUC 1 2 S 1R5 3 4 12 5 05 6 B *This product will be released in November 2004 including 3.3V o

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On-board type Ordering information SUCS1R5 R SUC 1 2 S 1R5 3 4 12 5 05 6 B *This product will be released in November 2004 including 3.3V o

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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HCS60R092E Super Junction MOSFET July 2016 HCS60R092E 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low s

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HCS60R350S August 2019 HCS60R350S 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Exce

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