CS60 Datasheet | Specifications & PDF Download

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application

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Silicon N-Channel Power MOSFET ○R CS60N20 ANR General Description： CS60N20 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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Document 134 50/60 Hz Current Sensor  CS60-010 The CS60 series is designed to measure current from 5 to 100 Arms. Applications include sensing branch

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N-Channel Trench Power MOSFET General Description The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applicatio

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Document 134 50/60 Hz Current Sensor  CS60-010 The CS60 series is designed to measure current from 5 to 100 Arms. Applications include sensing branch

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Silicon N-Channel Power MOSFET ○R CS60N20 A8R General Description： CS60N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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LOW PHASE NOISE CLOCK MULTIPLIER DATASHEET ICS601-01 Description The ICS601-01 is a low-cost, low phase noise, high-performance clock synthesizer fo

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isc Thyristors CS60-14IO1 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,moto

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Silicon N-Channel Power MOSFET CS60N06 C4 ○R General Description： CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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HCS60R150T Super Junction MOSFET Jan 2016 HCS60R150T 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low sw

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HCS60R115S Dec 2019 HCS60R115S 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS60R190FS Dec 2021 HCS60R190FS 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excel

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CS 60 Phase Control Thyristor VRRM = 1200-1600 V IT(RMS) = 75 A IT(AV)M = 48 A Preliminary Data Sheet VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1

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LOW PHASE NOISE CLOCK MULTIPLIER DATASHEET ICS601-02 Description The ICS601-02 is a low cost, low phase noise, high performance clock synthesizer fo

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LOW PHASE NOISE CLOCK MULTIPLIER DATASHEET ICS601-21 Description The ICS601-21 is a low-cost, low phase noise, high performance clock synthesizer fo

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HCS60R115FST Dec 2021 HCS60R115FST 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Exc

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