Channel-IC Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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NT50198 NT50198 TFT-LCD 3-Channel Charge Pump Power IC Draft Spec. Version 0.05 2012/08/22 2012/08/22 1 Version 0.05 With respect to the informat

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IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) IRF540 100 V <0.077 Ω s TYPICAL RDS(on)

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AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to pro

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® RT8249A/B/C Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs General Description The RT8249A/B/C is a dual-channel step-down,

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isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Mini

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan

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Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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Features • Uses advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE

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STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008

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www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On

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2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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