DB2AxxBW Datasheet | Specifications & PDF Download

*RoHS COMPLIANT Features ■ High rotational life ■ Metal shaft styles ■ Carbon element ■ Center detent option ■ Wide range of resistance tapers ■ RoHS

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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*RoHS COMPLIANT Features ■ High rotational life ■ Metal shaft styles ■ Carbon element ■ Center detent option ■ Wide range of resistance tapers ■ RoHS

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20V P-Channel MOSFETs PDB2309L General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Microwave Components www.DataSheet4U.com 03.02.28 Chip Multilayer Hybrid Baluns Chip Multilayer Hybrid Baluns 2.00±0.1 (3) (2) (1) 1.25±0.1 0.20±0.1

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Features n Low torque n Carbon element n Plain or knurled shaft option n Metal bushing n Metal shaft n Rear solder lugs n Audio or linear taper option

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20V Dual N-Channel MOSFETs PDB2216S General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS

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20V N+P Dual Channel MOSFETs PDB2116M General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors a

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Features n Low torque n Carbon element n Plain or knurled shaft option n Metal bushing n Metal shaft n Rear solder lugs n Audio or linear taper option

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*RoHS COMPLIANT Features ■ Carbon element ■ Plain or knurled shaft option ■ Metal bushing ■ Metal shaft ■ Rear solder lugs ■ Audio or linear taper op

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*RoHS COMPLIANT Features ■ High rotational life ■ Metal shaft styles ■ Carbon element ■ Center detent option ■ Wide range of resistance tapers ■ RoHS

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Features n Low torque n Carbon element n Plain or knurled shaft option n Metal bushing n Metal shaft n Rear solder lugs n Audio or linear taper option

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IS61QDB22M18C IS61QDB21M36C 2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM MARCH 2016 FEATURES  1Mx36 and 2Mx18 configuration available.  On-c

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IS61QDB21M18C IS61QDB251236C 1Mx18, 512Kx36 18Mb QUAD (Burst 2) Synchronous SRAM JANUARY 2021 FEATURES  512Kx36 and 1Mx18 configuration available.

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Single Phase Inverter Automotive Power MOSFET Module NXV08A170DB2 Features • Half Bridge Inverter for Variable Speed Motor Drive • Current Sensing and

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36 Mb (1M x 36. & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs I Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data vali

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SDB22W THRU SDB220W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2 A PINNING PIN 1 2 1 DESCRIPTION Catho

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20V N+P Dual Channel MOSFETs PDB2116S General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DM

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DB201 - DB207 BRIDGE RECTIFIER FEATURES ▪ Io 2A ▪ VRRM 50V~1000V ▪ Glass passivated chip ▪ High surge forward current capability APPLICATIONS ▪ Gene

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IS61QDB21M18A IS61QDB251236A 1Mx18, 512Kx36 18Mb QUAD (Burst 2) Synchronous SRAM NOVEMBER 2014 FEATURES  512Kx36 and 1Mx18 configuration available

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