DS56 Datasheet | Specifications & PDF Download

PDS560Q Green 5A SCHOTTKY BARRIER RECTIFIER PowerDI5 Product Summary VRRM (V) 60 IO (A) 5 VF Max (V) @ +25°C 0.67 IR Max (µA) @ +25°C 150 Descri

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MOSFET – N-Channel, POWERTRENCH) 60 V FDS5680 General Description This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that

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FDS5690 March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's a

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FDS5680 July 1999 FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's a

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Segment Digit LED Display 1.3 Common Anode 0.56 Inch (14.20mm) PRODUCT DESCRIPTION (1) 0.56 Inch (14.20mm) Digit Height (2) Low current operation (3)

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FDS5670 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall e

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Six-Way SMT Power Divider DS56-0001 DS56-0001 Low Cost Six-Way SMT Power Divider 824 - 960 MHz Features • • • • • • • Small Size, Low Profile Super

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PDS560 Green 5A SCHOTTKY BARRIER RECTIFIER POWERDI5 Product Summary VRRM (V) 60 IO (A) 5 VF max (V) @ +25°C IR max (µA) @ +25°C 0.60 150 Descri

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FDS5672 N-Channel PowerTrench® MOSFET July 2005 FDS5672 N-Channel PowerTrench® MOSFET 60V, 12A, 10mΩ Features „ rDS(ON) = 10mΩ, VGS = 10V, ID = 12

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GaN EiceDRIVER™ product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhancement-mode GaN HEMTs Features

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MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ General Description The MDS5652 uses a

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FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t

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DS56-0005 Low Cost Six-Way SMT Power Divider 824 - 960 MHz Features • • • • • • Small Size, Low Profile Superior Repeatability (Lot-to-lot Variation

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FDS5682 N-Channel PowerTrench® MOSFET May 2008 FDS5682 N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mΩ Features „ rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5

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FDS5692Z N-Channel UltraFET Trench® MOSFET February 2006 FDS5692Z N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ General Description Features

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Segment Digit LED Display 1.3 Common Anode 0.56 Inch (14.20mm) PRODUCT DESCRIPTION (1) 0.56 Inch (14.20mm) Digit Height (2) Low current operation (3)

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FDS5690 FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Semiconductor's advanced Pow

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DS56-0006 Low Cost Six-Way SMT Power Divider 1700 - 2000 MHz Features • • • • • • Small Size, Low Profile Superior Repeatability (Lot-to-lot Variatio

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Segment Digit LED Display 1.4 Common Cathode 0.56 Inch (14.20mm) PRODUCT DESCRIPTION (1) 0.56 Inch (14.20mm) Digit Height (2) Low current operation (

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Segment Digit LED Display 1.3 Common Anode 0.56 Inch (14.20mm) PRODUCT DESCRIPTION (1) 0.56 Inch (14.20mm) Digit Height (2) Low current operation (3)

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