FE-100 Datasheet | Specifications & PDF Download

PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate c

(51 views)

1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

(26 views)

MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH proce

(21 views)

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

(18 views)

UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

(16 views)

 MT3203 1 &KDQQHO /RZ4JŠ 026)(7 9 $  PΩ   *HQHUDO'HVFULSWLRQ 7KLV1 &KDQQHO026)(7KDVEHHQGHVLJQHGVSHFLILFD

(16 views)

DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

(16 views)

HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free a

(15 views)

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.su

(15 views)

P1003BDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RAT

(14 views)

UNISONIC TECHNOLOGIES CO., LTD UF100N07 Preliminary 100A, 70V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF100N07 is a high voltage MOSFET and i

(14 views)

SPTP10R020HA 100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=1.75mΩ@VGS=10V  Low Gate Charge Minimize Swit

(14 views)

FDB0260N1007L N-Channel PowerTrench® MOSFET FDB0260N1007L N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ March 2016 Features „ Max rDS(on) = 2.

(14 views)

MOSFET – POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 DATA SHEET www.onsemi.com Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A

(14 views)

MOSFET – N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL86062-F085 Features • Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) =

(14 views)

MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 6

(14 views)

100V N-Channel MOSFET General Features  High speed power switching  RDS(ON),typ.=5.0mΩ@VGS=10V  Enhanced body diode dv/dt capability  Enhanced ava

(14 views)

100V 15A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX15N10 uses advanced SGT technology and design to provide excellent RDS(on) with low gate ch

(13 views)

MOSFET - Power, Single N-Channel 100 V, 1.7 mW, 267 A NTMTSC1D6N10MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize

(13 views)

H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap

(12 views)