FE-100 Datasheet | Specifications & PDF Download

1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate c

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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QN10L16-VB QN10L16-VB Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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AOD2910 100V N-Channel MOSFET General Description The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient

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UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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CMP100N04/CMB100N04/CMI100N04 N-Ch 40V Fast Switching MOSFETs General Description The100N04 is N-ch MOSFETs with extreme high cell density , which pr

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() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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N-Channel 100 V (D-S) MOSFET DTK18100 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. 0.0036 at VGS = 10 V 0.0039 at VGS = 7.5 V ID (

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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