FE-100 Datasheet | Specifications & PDF Download

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1 ■ ■ ■ Packa

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DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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P1003BDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RAT

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100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gat

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TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-sour

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AOD2910 100V N-Channel MOSFET General Description The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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UNISONIC TECHNOLOGIES CO., LTD 5N100-FC 5A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N100-FC provide excellent RDS(ON), low gate charge and

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UNISONIC TECHNOLOGIES CO., LTD 8N100-C 8.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N100-C provide excellent RDS(ON), low gate charge and

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HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free a

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CMP100N04/CMB100N04/CMI100N04 N-Ch 40V Fast Switching MOSFETs General Description The100N04 is N-ch MOSFETs with extreme high cell density , which pr

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sales.Mr.wang13826508770 www.sztssd.com Description AP100N03D 30V N-Channel Enhancement Mode MOSFET The AP100N03D uses advanced trench technology t

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PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features  RDS(ON), VGS@-10V,ID@-5A<210mΩ  RDS(ON), VGS@-4.5V,ID@-

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AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to

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IPB042N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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