FM-FE Datasheet | Specifications & PDF Download

30V, 100A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3010PT uses advanced trench technology and design to provide excellent RDS(on) with low ga

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Silan Microelectronics SD6834_Datasheet CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD6834 is current mode PWM+P

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SAW FILTER FOR Band38 Rx Murata part number : SAFEA2G59FM0F0A Package Dimensions Top View 1.35±0.05 (5) (4) (1) Dot Marking(0.3) $ QM (2) (3)

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www.DataSheet.co.kr FMH16N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF250,251 D86FN2,M2 30 AMPERES 200, 150 VOLTS ROS(ON) =Q.085 0 This series of N-Channel Enhancement-mode Power

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SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM6124 (：S&CIC1501) 16 LED FM6124 LED IC， 16 。FM6124 “ ”，，。FM6124 ， 。 FM6124 ， PCB 。 ， LED 。

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DOT MATRIX DISPLAY PACKAGE DIMENSION NFM-19881 Series FLYING ELECTRONICS INTERNAL CIRCUIT DIAGRAM NFM-19881CEG NFM-19881DEG PIN 1 6.00*7=42.00 4

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P5102FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA

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P5102FMNV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (

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GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fm

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Ka Band Power GaAs MESFET Chip AFM04P2-000 Features I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency

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Low Noise/Medium Power GaAs MESFET Chip AFM04P3-000 Features s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added E

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Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 Features s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High As

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Ka Band Power GaAs MESFET Chip AFM06P2-000 Features s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficien

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Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Ad

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Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Ad

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Ka Band Power GaAs MESFET Chip AFM08P2-000 Features s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz

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XY6112C PFM+PWM 、 XY6112CPWM。，AC85-300V 12W。， 。 ，AC/DC。IC ，；ICPFM ，， ；PFM，“2.0”。VCC 10V，， ，IC，、 、，。IC， ，。ROHS DIP-8。 Http://www.sh-xuanyan.com

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