EMA2 / UMA2N / FMA2A Transistors Emitter common (.
FMA2 - Emitter common
EMA2 / UMA2N / FMA2A Transistors Emitter common (dual digital transistors) EMA2 / UMA2N / FMA2A www.DataSheet4U.com zFeatures 1) Two DTA144E transis.FMA2A - Dual Digital Transistors
EMA2 / UMA2N / FMA2A Emitter common (dual digital transistors) Datasheet Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 47kΩ 47kΩ lFeature.HFMA290 - Surface Mount Glass Passivated High Efficiency Rectifiers
HFMA210 thru HFMA290 FEATURES Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1200V Forward Current 2.0A * Plastic .FDFMA2P857 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schott.FDFMA2P853 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P853 July 2014 Integrated P-Channel PowerTrench® MOSFET and Schottky D.FDFMA2N028Z - Integrated N-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky D.FDFMA2P029Z - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2006 FDFMA2P029Z –20V, –3.1A, 95mΩ Features MOSFET Integrated P-Ch.FMA219 - X-BAND LNA MMIC
FMA219 X-BAND LNA MMIC FEATURES: • • • • • • 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Si.FMA246 - HIGH GAIN X-BAND MMIC AMPLIFIER
FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Ou.FDFMA2P859T - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.0 A, 120 m: Features MOSFET: Max rDS(on) = 120 m: at .37FMA2-ACW1N - PIEZO Pushbutton Switches
Sealed Keypads Keyboards and Keypads SERIES 37F PIEZO Pushbutton Switches FEATURES • Fully Sealed • Virtually Indestructible • Vandal Resistant • In.37FMA2-ABW1R - PIEZO Pushbutton Switches
Sealed Keypads Keyboards and Keypads SERIES 37F PIEZO Pushbutton Switches FEATURES • Fully Sealed • Virtually Indestructible • Vandal Resistant • In.FFMA203 - Surface Mount Glass Passivated Super Fast Rectifiers
FFMA201 thru FFMA207P Surface Mount Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A FEATURES * Plastic pac.FFMA204 - Surface Mount Glass Passivated Super Fast Rectifiers
FFMA201 thru FFMA207P Surface Mount Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A FEATURES * Plastic pac.FFMA207P - Surface Mount Glass Passivated Super Fast Rectifiers
FFMA201 thru FFMA207P Surface Mount Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A FEATURES * Plastic pac.HFMA210 - Surface Mount Glass Passivated High Efficiency Rectifiers
HFMA210 thru HFMA290 FEATURES Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1200V Forward Current 2.0A * Plastic .HFMA260 - Surface Mount Glass Passivated High Efficiency Rectifiers
HFMA210 thru HFMA290 FEATURES Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1200V Forward Current 2.0A * Plastic .WFMA2512 - Current Sense Resistors
www.vishay.com WFM Vishay Dale Power Metal Plate™ Current Sense Resistors, Low Value (5 m to 500 m), Surface-Mount, High Power ADDITIONAL RESOURC.WFMA2010 - Current Sense Resistors
www.vishay.com WFM Vishay Dale Power Metal Plate™ Current Sense Resistors, Low Value (5 m to 500 m), Surface-Mount, High Power ADDITIONAL RESOURC.