HA-2515 Datasheet | Specifications & PDF Download

H5N2515P Silicon N Channel MOS FET High Speed Power Switching REJ03G0413-0100 Rev.1.00 Sep.28.2004 Features • Low on-resistance • Low leakage current

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FDW2515NZ February 2003 FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET

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T U CT ROD RO DUC P E P T E E OL UT O B S U B S TI T 5 S 2 5 E -2 HA SIBL Data Sheet PO S ® HA-2515 May 2003 FN2893.5 12MHz, High Input Impedance, O

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FDW2515NZ February 2003 FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Power Transistor BU2515AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum

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Product Folder Order Now Technical Documents Tools & Software Support & Community BQ25155 SLUSDO1A – JUNE 2019 – REVISED JULY 2019 BQ25155 I2C Co

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Alfa-MOS Technology AFN2515S 150V N-Channel Enhancement Mode MOSFET General Description AFN2515S, N-Channel enhancement mode MOSFET, uses Advanced T

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2515 is N-Channel MOS Field Effe

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ILS-2515 Vishay Dale Surface Mount Inductor FEATURES • • • • • • • Low profile 0.047 [1.19mm] maximum thickness. Self shielding. Surface mountable.

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http://www.ncepower.com NCEP02515K NCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely

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www.vishay.com WSC, WSN Vishay Dale Wirewound Resistors, Precision Power, Surface Mount FEATURES • All welded construction • Molded encapsulation

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www.vishay.com WSF Vishay Dale Metal Film Resistors, Power, Surface Mount Note * This datasheet provides information about parts that are RoHS-co

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isc Silicon NPN Power Transistor BU2515DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in

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isc Silicon NPN Power Transistor BU2515DX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in

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BQ25150 SLUSD04C – JULY 2018 – REVISED APRIL 2023 BQ25150 I2C Controlled 1-Cell 500-mA Linear Charger with 10-nA Ship Mode, Advanced Power Path Manage

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